Growth and characterization of highly tensile strained Ge1-xSnx formed on relaxed InyGa1-yP buffer layers

Wei Wang, Wan Khai Loke, Tingting Yin, Zheng Zhang, Vijay Richard D'Costa, Yuan Dong, Gengchiau Liang, Jisheng Pan, Zexiang Shen, Soon Fatt Yoon, Eng Soon Tok, Yee Chia Yeo*

*此作品的通信作者

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

Ge0.94Sn0.06 films with high tensile strain were grown on strain-relaxed InyGa1-yP virtual substrates using solid-source molecular beam epitaxy. The in-plane tensile strain in the Ge0.94Sn0.06 film was varied by changing the In mole fraction in InxGa1-xP buffer layer. The tensile strained Ge0.94Sn0.06 films were investigated by transmission electron microscopy, x-ray diffraction, and Raman spectroscopy. An in-plane tensile strain of up to 1% in the Ge0.94Sn0.06 was measured, which is much higher than that achieved using other buffer systems. Controlled thermal anneal experiment demonstrated that the strain was not relaxed for temperatures up to 500 °C. The band alignment of the tensile strained Ge0.94Sn0.06 on In0.77Ga0.23P was obtained by high resolution x-ray photoelectron spectroscopy. The Ge0.94Sn0.06/In0.77Ga0.23P interface was found to be of the type I band alignment, with a valence band offset of 0.31 ± 0.12 eV and a conduction band offset of 0.74 ± 0.12 eV.

原文English
文章編號125303
期刊Journal of Applied Physics
119
發行號12
DOIs
出版狀態Published - 28 3月 2016

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