Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition

Shih Chen Chen, Dan Hua Hsieh, Hsin Jiang, Yu Kuang Liao, Fang I. Lai, Chyong-Hua Chen, Chih-Wei Luo, Jenh-Yih Juang, Yu Lun Chueh*, Kaung-Hsiung Wu, Hao-Chung Kuo

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    研究成果: Article同行評審

    17 引文 斯高帕斯(Scopus)

    摘要

    In this work, CuIn1-xGaxSe2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu2-xSe, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD.

    原文English
    文章編號280
    頁(從 - 到)1-7
    頁數7
    期刊Nanoscale Research Letters
    9
    發行號1
    DOIs
    出版狀態Published - 2 六月 2014

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