@inproceedings{2b65ef3774ef487b90baad9edbda4669,
title = "Growth and characteristics of a-plane GaN/ZnO/GaN heterostructure",
abstract = "The crystal structure of a-plane GaN/ZnO heterostructures on r-plane sapphire was investigated by using the XRD and TEM measurment. It was found the formation of (220) ZnGa2O4 and crystal orientation of semipolar (1013) GaN at GaN/ZnO interface. The epitaxial relation of normal surface direction are the sapphire (1102) // a-GaN (1120) and ZnGa 2O4 (220) // semi-polar GaN (1013). Beside, the emission peak energy of ZnO appears shift about 60 meV in the GaN/ZnO/GaN heterostructures due to the re-crystallization of ZnO layer with Ga or N atom and the formation of the localized state.",
author = "Chang, {Chiao Yun} and Huang, {Huei Min} and Yu-Pin Lan and Tien-Chang Lu and Hao-Chung Kuo and Wang, {Shing Chung} and Tu, {Li Wei} and Hsieh, {Wen Feng}",
year = "2013",
doi = "10.1557/opl.2013.550",
language = "English",
isbn = "9781605115153",
series = "Materials Research Society Symposium Proceedings",
pages = "303--307",
booktitle = "Compound Semiconductors",
note = "2013 MRS Spring Meeting ; Conference date: 01-04-2013 Through 05-04-2013",
}