Growth and characteristics of a-plane GaN/ZnO/GaN heterostructure

Chiao Yun Chang, Huei Min Huang, Yu-Pin Lan, Tien-Chang Lu*, Hao-Chung Kuo, Shing Chung Wang, Li Wei Tu, Wen Feng Hsieh

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

The crystal structure of a-plane GaN/ZnO heterostructures on r-plane sapphire was investigated by using the XRD and TEM measurment. It was found the formation of (220) ZnGa2O4 and crystal orientation of semipolar (1013) GaN at GaN/ZnO interface. The epitaxial relation of normal surface direction are the sapphire (1102) // a-GaN (1120) and ZnGa 2O4 (220) // semi-polar GaN (1013). Beside, the emission peak energy of ZnO appears shift about 60 meV in the GaN/ZnO/GaN heterostructures due to the re-crystallization of ZnO layer with Ga or N atom and the formation of the localized state.

原文English
主出版物標題Compound Semiconductors
主出版物子標題Thin-Film Photovoltaics, LEDs, and Smart Energy Controls
頁面303-307
頁數5
DOIs
出版狀態Published - 2013
事件2013 MRS Spring Meeting - San Francisco, CA, 美國
持續時間: 1 4月 20135 4月 2013

出版系列

名字Materials Research Society Symposium Proceedings
1538
ISSN(列印)0272-9172

Conference

Conference2013 MRS Spring Meeting
國家/地區美國
城市San Francisco, CA
期間1/04/135/04/13

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