TY - GEN
T1 - Green Poly-Si TFTs
T2 - 2021 IEEE International Electron Devices Meeting, IEDM 2021
AU - Ye, Y. J.
AU - Yu, P. H.
AU - Lee, C. K.
AU - Li, P. W.
AU - Chen, K. M.
AU - Huang, G. W.
AU - Lin, H. C.
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - We report an ingenious, low-Temperature process platform for the fabrication of high-performance RF poly-Si TFTs with cut-off frequency (f{rm{T}}) of 63.6 GHz and maximum oscillation frequency (f{\max}) of 30 GHz, the highest values ever reported in poly-Si devices. The superior RF performance is achieved by an exquisite combination of large-grain poly-Si channel, T-shaped gate, sidewall air-spacers, and silicide electrodes, using nanosecond-pulsed green laser anneal, high etching selectivity, novel silicidation process by design, and microwave annealing for S/D dopant activation. Our reported poly-Si TFTs are a strong competitor against standard 0.35\mu rm{r} SOI CMOS devices, enabling a viable, cost-effective approach for a vast landscape of IoT and More-Than-Moore applications.
AB - We report an ingenious, low-Temperature process platform for the fabrication of high-performance RF poly-Si TFTs with cut-off frequency (f{rm{T}}) of 63.6 GHz and maximum oscillation frequency (f{\max}) of 30 GHz, the highest values ever reported in poly-Si devices. The superior RF performance is achieved by an exquisite combination of large-grain poly-Si channel, T-shaped gate, sidewall air-spacers, and silicide electrodes, using nanosecond-pulsed green laser anneal, high etching selectivity, novel silicidation process by design, and microwave annealing for S/D dopant activation. Our reported poly-Si TFTs are a strong competitor against standard 0.35\mu rm{r} SOI CMOS devices, enabling a viable, cost-effective approach for a vast landscape of IoT and More-Than-Moore applications.
UR - http://www.scopus.com/inward/record.url?scp=85126970648&partnerID=8YFLogxK
U2 - 10.1109/IEDM19574.2021.9720701
DO - 10.1109/IEDM19574.2021.9720701
M3 - Conference contribution
AN - SCOPUS:85126970648
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 4.3.1-4.3.4
BT - 2021 IEEE International Electron Devices Meeting, IEDM 2021
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 11 December 2021 through 16 December 2021
ER -