@inproceedings{2e12d80d9bbc4ac7bc0d973e5cba7a13,
title = "Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping",
abstract = "We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.",
author = "Lin, {Chih Pin} and Lyu, {Li Syuan} and Lin, {Ching Ting} and Liu, {Pang Shiuan} and Wen-Hao Chang and Li, {Lain Jong} and Tuo-Hung Hou",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 ; Conference date: 29-06-2015 Through 02-07-2015",
year = "2015",
month = jun,
day = "29",
doi = "10.1109/IPFA.2015.7224436",
language = "English",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "476--479",
booktitle = "Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015",
address = "美國",
}