Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

Chih Pin Lin, Li Syuan Lyu, Ching Ting Lin, Pang Shiuan Liu, Wen-Hao Chang, Lain Jong Li, Tuo-Hung Hou

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.

原文English
主出版物標題Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面476-479
頁數4
ISBN(電子)9781479999286, 9781479999286
DOIs
出版狀態Published - 29 六月 2015
事件22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan
持續時間: 29 六月 20152 七月 2015

出版系列

名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
2015-August

Conference

Conference22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
國家/地區Taiwan
城市Hsinchu
期間29/06/152/07/15

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