Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide

Chih Pin Lin, Ching Ting Lin, Pang Shiuan Liu, Ming Jiue Yu, Tuo-Hung Hou

    研究成果: Conference contribution同行評審

    2 引文 斯高帕斯(Scopus)

    摘要

    Transition metal dichalcogenide (TMD)-based field effect transistors are currently being actively researched as a post-silicon solution for integrated circuits. This paper discusses two of the major challenges: grain size in polycrystalline TMD monolayer films and chemical doping to improve TMD/metal contacts. The characterization techniques and the correlation with device electrical characteristics are investigated.

    原文English
    主出版物標題16th International Conference on Nanotechnology - IEEE NANO 2016
    發行者Institute of Electrical and Electronics Engineers Inc.
    頁面501-504
    頁數4
    ISBN(電子)9781509039142
    DOIs
    出版狀態Published - 24 8月 2016
    事件16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, 日本
    持續時間: 22 8月 201625 8月 2016

    出版系列

    名字16th International Conference on Nanotechnology - IEEE NANO 2016

    Conference

    Conference16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
    國家/地區日本
    城市Sendai
    期間22/08/1625/08/16

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