Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide

Chih Pin Lin, Ching Ting Lin, Pang Shiuan Liu, Ming Jiue Yu, Tuo-Hung Hou

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

Transition metal dichalcogenide (TMD)-based field effect transistors are currently being actively researched as a post-silicon solution for integrated circuits. This paper discusses two of the major challenges: grain size in polycrystalline TMD monolayer films and chemical doping to improve TMD/metal contacts. The characterization techniques and the correlation with device electrical characteristics are investigated.

原文English
主出版物標題16th International Conference on Nanotechnology - IEEE NANO 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面501-504
頁數4
ISBN(電子)9781509039142
DOIs
出版狀態Published - 24 八月 2016
事件16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
持續時間: 22 八月 201625 八月 2016

出版系列

名字16th International Conference on Nanotechnology - IEEE NANO 2016

Conference

Conference16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
國家/地區Japan
城市Sendai
期間22/08/1625/08/16

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