Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide

Chih Pin Lin; Ching Ting Lin; Pang Shiuan Liu; Ming Jiue Yu; Tuo-Hung Hou

doi:10.1109/NANO.2016.7751338

Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide

Chih Pin Lin, Ching Ting Lin, Pang Shiuan Liu, Ming Jiue Yu, Tuo-Hung Hou

研究成果: Conference contribution › 同行評審

2 引文斯高帕斯（Scopus）

摘要

Transition metal dichalcogenide (TMD)-based field effect transistors are currently being actively researched as a post-silicon solution for integrated circuits. This paper discusses two of the major challenges: grain size in polycrystalline TMD monolayer films and chemical doping to improve TMD/metal contacts. The characterization techniques and the correlation with device electrical characteristics are investigated.

原文	English
主出版物標題	16th International Conference on Nanotechnology - IEEE NANO 2016
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	501-504
頁數	4
ISBN（電子）	9781509039142
DOIs	https://doi.org/10.1109/NANO.2016.7751338
出版狀態	Published - 24 8月 2016
事件	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan 持續時間: 22 8月 2016 → 25 8月 2016

出版系列

名字	16th International Conference on Nanotechnology - IEEE NANO 2016

Conference

Conference	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
國家/地區	Japan
城市	Sendai
期間	22/08/16 → 25/08/16

存取文件

10.1109/NANO.2016.7751338

其它文件與鏈接

Link to publication in Scopus

引用此

Lin, C. P., Lin, C. T., Liu, P. S., Yu, M. J., & Hou, T-H. (2016). Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide. 於 16th International Conference on Nanotechnology - IEEE NANO 2016 (頁 501-504). [7751338] (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751338

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title = "Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide",

abstract = "Transition metal dichalcogenide (TMD)-based field effect transistors are currently being actively researched as a post-silicon solution for integrated circuits. This paper discusses two of the major challenges: grain size in polycrystalline TMD monolayer films and chemical doping to improve TMD/metal contacts. The characterization techniques and the correlation with device electrical characteristics are investigated.",

author = "Lin, {Chih Pin} and Lin, {Ching Ting} and Liu, {Pang Shiuan} and Yu, {Ming Jiue} and Tuo-Hung Hou",

year = "2016",

month = aug,

day = "24",

doi = "10.1109/NANO.2016.7751338",

language = "English",

series = "16th International Conference on Nanotechnology - IEEE NANO 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "501--504",

booktitle = "16th International Conference on Nanotechnology - IEEE NANO 2016",

address = "United States",

note = "null ; Conference date: 22-08-2016 Through 25-08-2016",

}

Lin, CP, Lin, CT, Liu, PS, Yu, MJ & Hou, T-H 2016, Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide. 於 16th International Conference on Nanotechnology - IEEE NANO 2016., 7751338, 16th International Conference on Nanotechnology - IEEE NANO 2016, Institute of Electrical and Electronics Engineers Inc., 頁 501-504, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, Sendai, Japan, 22/08/16. https://doi.org/10.1109/NANO.2016.7751338

Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide. / Lin, Chih Pin; Lin, Ching Ting; Liu, Pang Shiuan 等.

16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 501-504 7751338 (16th International Conference on Nanotechnology - IEEE NANO 2016).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide

AU - Lin, Chih Pin

AU - Lin, Ching Ting

AU - Liu, Pang Shiuan

AU - Yu, Ming Jiue

AU - Hou, Tuo-Hung

PY - 2016/8/24

Y1 - 2016/8/24

N2 - Transition metal dichalcogenide (TMD)-based field effect transistors are currently being actively researched as a post-silicon solution for integrated circuits. This paper discusses two of the major challenges: grain size in polycrystalline TMD monolayer films and chemical doping to improve TMD/metal contacts. The characterization techniques and the correlation with device electrical characteristics are investigated.

AB - Transition metal dichalcogenide (TMD)-based field effect transistors are currently being actively researched as a post-silicon solution for integrated circuits. This paper discusses two of the major challenges: grain size in polycrystalline TMD monolayer films and chemical doping to improve TMD/metal contacts. The characterization techniques and the correlation with device electrical characteristics are investigated.

UR - http://www.scopus.com/inward/record.url?scp=85006874592&partnerID=8YFLogxK

U2 - 10.1109/NANO.2016.7751338

DO - 10.1109/NANO.2016.7751338

M3 - Conference contribution

AN - SCOPUS:85006874592

T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016

SP - 501

EP - 504

BT - 16th International Conference on Nanotechnology - IEEE NANO 2016

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 22 August 2016 through 25 August 2016

ER -

Lin CP, Lin CT, Liu PS, Yu MJ, Hou T-H. Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide. 於 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 501-504. 7751338. (16th International Conference on Nanotechnology - IEEE NANO 2016). doi: 10.1109/NANO.2016.7751338

Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide

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