Giant magnetocurrent in silicon-base magnetic tunneling transistor

Y. W. Huang, C. K. Lo*, Y. D. Yao, L. C. Hsieh, J. J. Ju, Der-Ray Huang, J. H. Huang

*此作品的通信作者

研究成果: Conference article同行評審

6 引文 斯高帕斯(Scopus)

摘要

A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.

原文English
頁(從 - 到)279-282
頁數4
期刊Journal of Magnetism and Magnetic Materials
282
發行號1-3
DOIs
出版狀態Published - 1 11月 2004
事件International Symposium on Advanced Magnetic Technologies - Taipei, Taiwan
持續時間: 13 11月 200316 11月 2003

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