Giant magnetocurrent in silicon-base magnetic tunneling transistor

Y. W. Huang; C. K. Lo; Y. D. Yao; L. C. Hsieh; J. J. Ju; Der-Ray Huang; J. H. Huang

doi:10.1016/j.jmmm.2004.04.065

Giant magnetocurrent in silicon-base magnetic tunneling transistor

Y. W. Huang, C. K. Lo^*, Y. D. Yao, L. C. Hsieh, J. J. Ju, Der-Ray Huang, J. H. Huang

^*此作品的通信作者

照明與能源光電研究所

研究成果: Conference article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.

原文	English
頁（從 - 到）	279-282
頁數	4
期刊	Journal of Magnetism and Magnetic Materials
卷	282
發行號	1-3
DOIs	https://doi.org/10.1016/j.jmmm.2004.04.065
出版狀態	Published - 1 11月 2004
事件	International Symposium on Advanced Magnetic Technologies - Taipei, 台灣持續時間: 13 11月 2003 → 16 11月 2003

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10.1016/j.jmmm.2004.04.065

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@article{03c4162ba1fa48379c7508e33a94921f,

title = "Giant magnetocurrent in silicon-base magnetic tunneling transistor",

abstract = "A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.",

keywords = "Magnetic tunneling junction, Magnetocurrent, Spin transistor",

author = "Huang, {Y. W.} and Lo, {C. K.} and Yao, {Y. D.} and Hsieh, {L. C.} and Ju, {J. J.} and Der-Ray Huang and Huang, {J. H.}",

year = "2004",

month = nov,

day = "1",

doi = "10.1016/j.jmmm.2004.04.065",

language = "English",

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journal = "Journal of Magnetism and Magnetic Materials",

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note = "International Symposium on Advanced Magnetic Technologies ; Conference date: 13-11-2003 Through 16-11-2003",

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TY - JOUR

T1 - Giant magnetocurrent in silicon-base magnetic tunneling transistor

AU - Huang, Y. W.

AU - Lo, C. K.

AU - Yao, Y. D.

AU - Hsieh, L. C.

AU - Ju, J. J.

AU - Huang, Der-Ray

AU - Huang, J. H.

PY - 2004/11/1

Y1 - 2004/11/1

N2 - A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.

AB - A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.

KW - Magnetic tunneling junction

KW - Magnetocurrent

KW - Spin transistor

UR - http://www.scopus.com/inward/record.url?scp=5744239099&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2004.04.065

DO - 10.1016/j.jmmm.2004.04.065

M3 - Conference article

AN - SCOPUS:5744239099

SN - 0304-8853

VL - 282

SP - 279

EP - 282

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1-3

T2 - International Symposium on Advanced Magnetic Technologies

Y2 - 13 November 2003 through 16 November 2003

ER -

Giant magnetocurrent in silicon-base magnetic tunneling transistor

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