Gettering of nickel within the Ni-metal induced lateral crystallization polycrystalline silicon film through the contact holes

Chen-Ming Hu*, Yew-Chuhg Wu

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Ni-metal-induced lateral crystallization (NILC) of amorphous Si (α-Si) has been used to fabricate high-performance lowtemperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). The current crystallization technology, however, often leads to trap Ni and NiSi2 precipitates, which degrade the device performance. In this study, α-Si film was coated on the top of contact holes as Ni-gettering layer. It was found the Ni-metal impurity within the NILC poly-Si film was reduced without addition mask.

原文English
期刊Japanese Journal of Applied Physics, Part 2: Letters
46
發行號45-49
DOIs
出版狀態Published - 14 12月 2007

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