Gettering of Ni from Ni-metal induced lateral crystallization polycrystalline silicon films using a gettering substrate

Chih Yuan Hou; Chi Ching Lin; Yew-Chuhg Wu

doi:10.1143/JJAP.45.6803

Gettering of Ni from Ni-metal induced lateral crystallization polycrystalline silicon films using a gettering substrate

Chih Yuan Hou, Chi Ching Lin, Yew-Chuhg Wu^*

^*此作品的通信作者

材料科學與工程學系

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi ₂ precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as Ni-gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced.

原文	English
頁（從 - 到）	6803-6805
頁數	3
期刊	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
卷	45
發行號	9 A
DOIs	https://doi.org/10.1143/JJAP.45.6803
出版狀態	Published - 7 9月 2006

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abstract = "Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi 2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as Ni-gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced.",

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AU - Hou, Chih Yuan

AU - Lin, Chi Ching

AU - Wu, Yew-Chuhg

PY - 2006/9/7

Y1 - 2006/9/7

N2 - Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi 2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as Ni-gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced.

AB - Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi 2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as Ni-gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced.

KW - Gettering

KW - NILC

KW - Thin-film transistors

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DO - 10.1143/JJAP.45.6803

M3 - Article

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 9 A

ER -

Gettering of Ni from Ni-metal induced lateral crystallization polycrystalline silicon films using a gettering substrate

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