Gettering of Ni from Ni-metal induced lateral crystallization polycrystalline silicon films using a gettering substrate

Chih Yuan Hou, Chi Ching Lin, Yew-Chuhg Wu*

*此作品的通信作者

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi 2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as Ni-gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced.

原文English
頁(從 - 到)6803-6805
頁數3
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
發行號9 A
DOIs
出版狀態Published - 7 9月 2006

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