Germanium Spherical Quantum-Dot Single-Hole Transistors with Self-organized Tunnel Barriers and Self-aligned Electrodes

Chi Cheng Lai, R. C. Pan, I. Hsiang Wang, T. George, Horng Chih Lin, Pei Wen Li

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

We report the fabrication and electrical characterization of single-hole transistors (SHTs), in which a Ge spherical quantum dot (QD) weakly couples to self-aligned electrodes via self-organized tunnel barriers of Si3N4. A combination of lithographic patterning, sidewall spacers, and selfassembled growth was used for fabrication. The core experimental approach is based on the selective oxidation of poly-SiGe spacer islands located at the specially designed included-angle locations of Si3N4/Si-trenches. By adjusting processing times for conformal deposition, etch back and thermal oxidation, good tunability in the Ge QD size and its tunnel-barrier widths were controllably achieved. Each Ge QD is electrically addressable via self-aligned Si gate and reservoirs, thus offering an effective building block for implementing single-charge devices.

原文English
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頁數1
期刊IEEE Journal of the Electron Devices Society
DOIs
出版狀態Accepted/In press - 2023

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