Germanium Quantum-Dot Single-Hole Transistors with Self-organized Tunnel Barriers and Self-aligned Electrodes Using Ingenious Sidewall Spacer and Oxidation Techniques

Rong Cun Pan, I. Hsiang Wang, Chi Cheng Lai, Thomas George, Horng Chih Lin, Pei Wen Li*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

We report the formation of Ge quantum dots (QDs) with self-organized tunnel barriers and self-aligned electrodes, using a coordinated combination of lithographic patterning and self-assembled growth. The core experimental design is based on the thermal oxidation of poly-SiGe spacer islands located at the included-angle location of Si3N4/Si-trenches with specially designed fanout structures. By suitably adjusting the process times for conformal deposition, direct etch back and thermal oxidation of poly-SiGe, Ge QDs and their tunnel barriers with good tunability in sizes and widths were controllably achieved. Ge QDs are electrically addressable via self-aligned Si electrodes, offering an effective building block for the implementation of single-electron devices.

原文English
主出版物標題6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面321-323
頁數3
ISBN(電子)9781665421775
DOIs
出版狀態Published - 2022
事件6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan
持續時間: 6 3月 20229 3月 2022

出版系列

名字6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
國家/地區Japan
城市Virtual, Online
期間6/03/229/03/22

指紋

深入研究「Germanium Quantum-Dot Single-Hole Transistors with Self-organized Tunnel Barriers and Self-aligned Electrodes Using Ingenious Sidewall Spacer and Oxidation Techniques」主題。共同形成了獨特的指紋。

引用此