Germanium MOS: An Evaluation from Carrier Quantization and Tunneling Current

Tony Low*, Y. T. Hou, M. F. Li, Chunxiang Zhu, D. L. Kwong, Albert Chin

*此作品的通信作者

    研究成果: Conference article同行評審

    15 引文 斯高帕斯(Scopus)

    摘要

    Ge is promising as an alternative channel material due to its high carrier mobility. In this work, we report an evaluation of Ge MOS from quantization and gate tunneling current simulations. Key findings are: (1) Electron quantization effect is stronger and thus more important in Ge than in Si, and results in smaller inversion capacitance in NMOS. (2) Using constant inversion charge for supply voltage VDD scaling, moderate reduction in inversion charge is required to meet ITRS roadmap, which can be achieved with high mobility channel. (3) Due to its smaller electron mass and resulting higher electron quantization energy, Ge MOS shows considerably larger gate tunneling current than Si MOS for the same gate dielectric. (4) High-K gate dielectrics are required for low leakage; however, significant challenges exist in the formation of high quality interface layer between high-K and Ge.

    原文English
    頁(從 - 到)117-118
    頁數2
    期刊Digest of Technical Papers - Symposium on VLSI Technology
    DOIs
    出版狀態Published - 1 10月 2003
    事件2003 Symposium on VLSI Technology - Kyoto, Japan
    持續時間: 10 6月 200312 6月 2003

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