TY - GEN

T1 - Geometry effect on magnetic susceptibility of vertically coupled nanoscale InAs/GaAs quantum rings

AU - Li, Yiming

PY - 2005

Y1 - 2005

N2 - Geometry effect on the magnetic susceptibility of vertically coupled quantum rings (VCQRs) with three shapes of structure is numerically investigated. The theoretical model of VCQRs considers a three-dimensional effective one-electronic-band Hamiltonian with the position- and energy-dependent effective mass, the finite hard-wall confinement potential, and the Ben Daniel-Duke boundary condition. With the nonlinear iterative method, the model is solved with respect to the disk-, elliptical-, and triangular-shaped VCQRs under applied magnetic fields. For nanoscale InAs/GaAs quantum rings, electron transition energy depends on the shape and size of VCQRs; it oscillates non-periodically among the lowest electron states as a function of external magnetic fields due to the penetration of magnetic fields into the inter-regions of VCQRs. Non-periodical oscillating magnetization results in that the differential susceptibility has delta-like paramagnetic peaks. The peak depends on the geometry of structure which is contrary to conventional mesoscopic arguments. Recent development of spintronics requires an extensive study of magnetic properties of nanoscale semiconductor structures. This study provides interesting results for the magneto-optical phenomena of the nanoscale semiconductor artificial molecules.

AB - Geometry effect on the magnetic susceptibility of vertically coupled quantum rings (VCQRs) with three shapes of structure is numerically investigated. The theoretical model of VCQRs considers a three-dimensional effective one-electronic-band Hamiltonian with the position- and energy-dependent effective mass, the finite hard-wall confinement potential, and the Ben Daniel-Duke boundary condition. With the nonlinear iterative method, the model is solved with respect to the disk-, elliptical-, and triangular-shaped VCQRs under applied magnetic fields. For nanoscale InAs/GaAs quantum rings, electron transition energy depends on the shape and size of VCQRs; it oscillates non-periodically among the lowest electron states as a function of external magnetic fields due to the penetration of magnetic fields into the inter-regions of VCQRs. Non-periodical oscillating magnetization results in that the differential susceptibility has delta-like paramagnetic peaks. The peak depends on the geometry of structure which is contrary to conventional mesoscopic arguments. Recent development of spintronics requires an extensive study of magnetic properties of nanoscale semiconductor structures. This study provides interesting results for the magneto-optical phenomena of the nanoscale semiconductor artificial molecules.

KW - Electron transition energy

KW - Magnetic field effects

KW - Magnetic susceptibility

KW - Magnetization

KW - Modeling and simulation

KW - Semi-conductor artificial molecules

KW - Vertically coupled quantum rings

UR - http://www.scopus.com/inward/record.url?scp=33746958966&partnerID=8YFLogxK

U2 - 10.1109/NANO.2005.1500679

DO - 10.1109/NANO.2005.1500679

M3 - Conference contribution

AN - SCOPUS:33746958966

SN - 0780391993

SN - 9780780391994

T3 - 2005 5th IEEE Conference on Nanotechnology

SP - 11

EP - 14

BT - 2005 5th IEEE Conference on Nanotechnology

PB - IEEE Computer Society

Y2 - 11 July 2005 through 15 July 2005

ER -