Generally applicable self-masking technique for nanotips array fabrication

Well-aligned nanotip arrays were fabricated via a self-masking dry etching technique in an electron cyclotron resonance (ECR) plasma process. Nanotip arrays of Si, poly silicon, GaN, GaP, sapphire, and Al were fabricated. Simultaneous etching of the substrate and formation of silicon carbide (SiC) protecting caps are attributed to the nanotip formation. The ultra-low turn on filed for electron field emission as well as the surface enhanced Raman Spectroscopic study of Si nanotips is also demonstrated.