Ge Single-Crystal-Island (Ge-SCI) Technique and BEOL Ge FinFET Switch Arrays on Top of Si Circuits for Monolithic 3D Voltage Regulators

Hao Tung Chung; Bo Jheng Shih; Chih Chao Yang; Nei Chih Lin; Po Tsang Huang; Yun Ping Lan; Kuan Fu Lai; Wan Ting Hsu; Yu Ming Pan; Zhong Jie Hong; Han Wen Hu; Huang Chung Cheng; Chang Hong Shen; Jia Min Shieh; Fu Kuo Hsueh; Bo Yuan Chen; Da Chiang Chang; Wen-Kuan Yeh; Kuan Neng Chen; Chenming Hu

doi:10.1109/IEDM19574.2021.9720512

Ge Single-Crystal-Island (Ge-SCI) Technique and BEOL Ge FinFET Switch Arrays on Top of Si Circuits for Monolithic 3D Voltage Regulators

Hao Tung Chung, Bo Jheng Shih, Chih Chao Yang, Nei Chih Lin, Po Tsang Huang^*, Yun Ping Lan, Kuan Fu Lai, Wan Ting Hsu, Yu Ming Pan, Zhong Jie Hong, Han Wen Hu, Huang Chung Cheng, Chang Hong Shen, Jia Min Shieh, Fu Kuo Hsueh, Bo Yuan Chen, Da Chiang Chang, Wen-Kuan Yeh, Kuan Neng Chen, Chenming Hu

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

摘要

A Ge single-crystal-island (Ge-SCI) technique and thus fabricated monolithic 3D back-end of line (BEOL) Ge FinFET were demonstrated for the first time. The Ge-SCI laser crystallization step results in minimal heating of the underlying Si substrate (T<155°C according to thermal simulation) and the Ge circuit fabrication temperature was kept below 400°C. The functionality of the underlying Si standard logic cells and a 19-stage ring oscillator were unaffected by the Ge-SCI FinFET process as required for a monolithic 3D technology. Simulation results of a monolithic 3D voltage regulator (FIVR) shows Ge-SCI FinFET switch achieving 1.6x response time improvement and 36% reduction in voltage droop compared to the same design implemented with BEOL Si FinFETs.

原文	English
主出版物標題	2021 IEEE International Electron Devices Meeting, IEDM 2021
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	34.5.1-34.5.4
ISBN（電子）	9781665425728
DOIs	https://doi.org/10.1109/IEDM19574.2021.9720512
出版狀態	Published - 2021
事件	2021 IEEE International Electron Devices Meeting, IEDM 2021 - San Francisco, 美國持續時間: 11 12月 2021 → 16 12月 2021

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
卷	2021-December
ISSN（列印）	0163-1918

Conference

Conference	2021 IEEE International Electron Devices Meeting, IEDM 2021
國家/地區	美國
城市	San Francisco
期間	11/12/21 → 16/12/21

存取文件

10.1109/IEDM19574.2021.9720512

其它文件與鏈接

Link to publication in Scopus

引用此

Chung, H. T., Shih, B. J., Yang, C. C., Lin, N. C., Huang, P. T., Lan, Y. P., Lai, K. F., Hsu, W. T., Pan, Y. M., Hong, Z. J., Hu, H. W., Cheng, H. C., Shen, C. H., Shieh, J. M., Hsueh, F. K., Chen, B. Y., Chang, D. C., Yeh, W.-K., Chen, K. N., & Hu, C. (2021). Ge Single-Crystal-Island (Ge-SCI) Technique and BEOL Ge FinFET Switch Arrays on Top of Si Circuits for Monolithic 3D Voltage Regulators. 於 2021 IEEE International Electron Devices Meeting, IEDM 2021 (頁 34.5.1-34.5.4). (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2021-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19574.2021.9720512

Chung, Hao Tung ; Shih, Bo Jheng ; Yang, Chih Chao 等. / Ge Single-Crystal-Island (Ge-SCI) Technique and BEOL Ge FinFET Switch Arrays on Top of Si Circuits for Monolithic 3D Voltage Regulators. 2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. 頁 34.5.1-34.5.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{1807f98af9964655963a0147639482fb,

title = "Ge Single-Crystal-Island (Ge-SCI) Technique and BEOL Ge FinFET Switch Arrays on Top of Si Circuits for Monolithic 3D Voltage Regulators",

abstract = "A Ge single-crystal-island (Ge-SCI) technique and thus fabricated monolithic 3D back-end of line (BEOL) Ge FinFET were demonstrated for the first time. The Ge-SCI laser crystallization step results in minimal heating of the underlying Si substrate (T<155°C according to thermal simulation) and the Ge circuit fabrication temperature was kept below 400°C. The functionality of the underlying Si standard logic cells and a 19-stage ring oscillator were unaffected by the Ge-SCI FinFET process as required for a monolithic 3D technology. Simulation results of a monolithic 3D voltage regulator (FIVR) shows Ge-SCI FinFET switch achieving 1.6x response time improvement and 36% reduction in voltage droop compared to the same design implemented with BEOL Si FinFETs.",

author = "Chung, {Hao Tung} and Shih, {Bo Jheng} and Yang, {Chih Chao} and Lin, {Nei Chih} and Huang, {Po Tsang} and Lan, {Yun Ping} and Lai, {Kuan Fu} and Hsu, {Wan Ting} and Pan, {Yu Ming} and Hong, {Zhong Jie} and Hu, {Han Wen} and Cheng, {Huang Chung} and Shen, {Chang Hong} and Shieh, {Jia Min} and Hsueh, {Fu Kuo} and Chen, {Bo Yuan} and Chang, {Da Chiang} and Wen-Kuan Yeh and Chen, {Kuan Neng} and Chenming Hu",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Electron Devices Meeting, IEDM 2021 ; Conference date: 11-12-2021 Through 16-12-2021",

year = "2021",

doi = "10.1109/IEDM19574.2021.9720512",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "34.5.1--34.5.4",

booktitle = "2021 IEEE International Electron Devices Meeting, IEDM 2021",

address = "美國",

}

Chung, HT, Shih, BJ, Yang, CC, Lin, NC, Huang, PT, Lan, YP, Lai, KF, Hsu, WT, Pan, YM, Hong, ZJ, Hu, HW, Cheng, HC, Shen, CH, Shieh, JM, Hsueh, FK, Chen, BY, Chang, DC, Yeh, W-K, Chen, KN & Hu, C 2021, Ge Single-Crystal-Island (Ge-SCI) Technique and BEOL Ge FinFET Switch Arrays on Top of Si Circuits for Monolithic 3D Voltage Regulators. 於 2021 IEEE International Electron Devices Meeting, IEDM 2021. Technical Digest - International Electron Devices Meeting, IEDM, 卷 2021-December, Institute of Electrical and Electronics Engineers Inc., 頁 34.5.1-34.5.4, 2021 IEEE International Electron Devices Meeting, IEDM 2021, San Francisco, 美國, 11/12/21. https://doi.org/10.1109/IEDM19574.2021.9720512

Ge Single-Crystal-Island (Ge-SCI) Technique and BEOL Ge FinFET Switch Arrays on Top of Si Circuits for Monolithic 3D Voltage Regulators. / Chung, Hao Tung; Shih, Bo Jheng; Yang, Chih Chao 等.
2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 34.5.1-34.5.4 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2021-December).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Ge Single-Crystal-Island (Ge-SCI) Technique and BEOL Ge FinFET Switch Arrays on Top of Si Circuits for Monolithic 3D Voltage Regulators

AU - Chung, Hao Tung

AU - Shih, Bo Jheng

AU - Yang, Chih Chao

AU - Lin, Nei Chih

AU - Huang, Po Tsang

AU - Lan, Yun Ping

AU - Lai, Kuan Fu

AU - Hsu, Wan Ting

AU - Pan, Yu Ming

AU - Hong, Zhong Jie

AU - Hu, Han Wen

AU - Cheng, Huang Chung

AU - Shen, Chang Hong

AU - Shieh, Jia Min

AU - Hsueh, Fu Kuo

AU - Chen, Bo Yuan

AU - Chang, Da Chiang

AU - Yeh, Wen-Kuan

AU - Chen, Kuan Neng

AU - Hu, Chenming

PY - 2021

Y1 - 2021

N2 - A Ge single-crystal-island (Ge-SCI) technique and thus fabricated monolithic 3D back-end of line (BEOL) Ge FinFET were demonstrated for the first time. The Ge-SCI laser crystallization step results in minimal heating of the underlying Si substrate (T<155°C according to thermal simulation) and the Ge circuit fabrication temperature was kept below 400°C. The functionality of the underlying Si standard logic cells and a 19-stage ring oscillator were unaffected by the Ge-SCI FinFET process as required for a monolithic 3D technology. Simulation results of a monolithic 3D voltage regulator (FIVR) shows Ge-SCI FinFET switch achieving 1.6x response time improvement and 36% reduction in voltage droop compared to the same design implemented with BEOL Si FinFETs.

AB - A Ge single-crystal-island (Ge-SCI) technique and thus fabricated monolithic 3D back-end of line (BEOL) Ge FinFET were demonstrated for the first time. The Ge-SCI laser crystallization step results in minimal heating of the underlying Si substrate (T<155°C according to thermal simulation) and the Ge circuit fabrication temperature was kept below 400°C. The functionality of the underlying Si standard logic cells and a 19-stage ring oscillator were unaffected by the Ge-SCI FinFET process as required for a monolithic 3D technology. Simulation results of a monolithic 3D voltage regulator (FIVR) shows Ge-SCI FinFET switch achieving 1.6x response time improvement and 36% reduction in voltage droop compared to the same design implemented with BEOL Si FinFETs.

UR - http://www.scopus.com/inward/record.url?scp=85126986326&partnerID=8YFLogxK

U2 - 10.1109/IEDM19574.2021.9720512

DO - 10.1109/IEDM19574.2021.9720512

M3 - Conference contribution

AN - SCOPUS:85126986326

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 34.5.1-34.5.4

BT - 2021 IEEE International Electron Devices Meeting, IEDM 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2021 IEEE International Electron Devices Meeting, IEDM 2021

Y2 - 11 December 2021 through 16 December 2021

ER -

Chung HT, Shih BJ, Yang CC, Lin NC, Huang PT, Lan YP 等. Ge Single-Crystal-Island (Ge-SCI) Technique and BEOL Ge FinFET Switch Arrays on Top of Si Circuits for Monolithic 3D Voltage Regulators. 於 2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 34.5.1-34.5.4. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM19574.2021.9720512

Ge Single-Crystal-Island (Ge-SCI) Technique and BEOL Ge FinFET Switch Arrays on Top of Si Circuits for Monolithic 3D Voltage Regulators

摘要

出版系列

Conference

存取文件

其它文件與鏈接

指紋

引用此