Ge Single-Crystal-Island (Ge-SCI) Technique and BEOL Ge FinFET Switch Arrays on Top of Si Circuits for Monolithic 3D Voltage Regulators

Hao Tung Chung, Bo Jheng Shih, Chih Chao Yang, Nei Chih Lin, Po Tsang Huang*, Yun Ping Lan, Kuan Fu Lai, Wan Ting Hsu, Yu Ming Pan, Zhong Jie Hong, Han Wen Hu, Huang Chung Cheng, Chang Hong Shen, Jia Min Shieh, Fu Kuo Hsueh, Bo Yuan Chen, Da Chiang Chang, Wen-Kuan Yeh, Kuan Neng Chen, Chenming Hu

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

A Ge single-crystal-island (Ge-SCI) technique and thus fabricated monolithic 3D back-end of line (BEOL) Ge FinFET were demonstrated for the first time. The Ge-SCI laser crystallization step results in minimal heating of the underlying Si substrate (T<155°C according to thermal simulation) and the Ge circuit fabrication temperature was kept below 400°C. The functionality of the underlying Si standard logic cells and a 19-stage ring oscillator were unaffected by the Ge-SCI FinFET process as required for a monolithic 3D technology. Simulation results of a monolithic 3D voltage regulator (FIVR) shows Ge-SCI FinFET switch achieving 1.6x response time improvement and 36% reduction in voltage droop compared to the same design implemented with BEOL Si FinFETs.

原文English
主出版物標題2021 IEEE International Electron Devices Meeting, IEDM 2021
發行者Institute of Electrical and Electronics Engineers Inc.
頁面34.5.1-34.5.4
ISBN(電子)9781665425728
DOIs
出版狀態Published - 2021
事件2021 IEEE International Electron Devices Meeting, IEDM 2021 - San Francisco, United States
持續時間: 11 12月 202116 12月 2021

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2021-December
ISSN(列印)0163-1918

Conference

Conference2021 IEEE International Electron Devices Meeting, IEDM 2021
國家/地區United States
城市San Francisco
期間11/12/2116/12/21

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