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Ge epitaxial growth on GaAs substrates for application to Ge-source/drain GaAs MOSFETs
Guang Li Luo
*
, Zong You Han
,
Chao-Hsin Chien
, Chih Hsin Ko
, Clement H. Wann
, Hau Yu Lin
, Yi Ling Shen
, Cheng Ting Chung
, Shih Chiang Huang
, Chao Ching Cheng
, Chun Yen Chang
*
此作品的通信作者
國際半導體產業學院
研究成果
:
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同行評審
17
引文 斯高帕斯(Scopus)
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Keyphrases
Gallium Arsenide
100%
Epitaxial Growth
100%
GaAs Substrate
100%
Ge-source
100%
GaAs MOSFET
100%
Depositional System
33%
Transmission Electron Microscopy
33%
MOSFET
33%
High Vacuum Chemical Vapor Deposition
33%
Ge Film
33%
Epitaxially Grown
33%
Incubation Time
33%
Selective Growth
33%
Chemical Solution
33%
Growth Behavior
33%
Wet Chemical Method
33%
Intrinsic Limits
33%
Selective Epitaxial Growth
33%
Island Growth
33%
GaAs Diodes
33%
GaAs(100)
33%
Virtual Substrate
33%
Engineering
Gallium Arsenide
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Gaas Substrate
100%
Deposition System
16%
Chemical Vapor Deposition
16%
Vapor Deposition
16%
Limitations
16%
Initial Stage
16%
Growth Behavior
16%
Material Science
Gallium Arsenide
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Epitaxy
100%
Film
14%
Transmission Electron Microscopy
14%
Chemical Vapor Deposition
14%
Solution (Chemistry)
14%
Surface (Surface Science)
14%