@inproceedings{17aa7537d32446139d89f24f6f1f69e4,
title = "Ge channel MOSFETs directly on silicon",
abstract = "This paper presents high performance Ge/Si diode, trigate Ge PFET, junctionless trigate Ge PFET and strained Ge NFET directly on Si wafer. The leakage current of the Ge/Si diode is as low as <10-7 A/cm2. Trigate PFET depicts a driving current of 22 μA/μm at VG = -2 V and a low OFF-current of 3 nA/μm at VG = 2 V. Junctionless trigate PFET shows ION/IOFF ratio of ∼6×104 (ID), ∼6×105 (IS), and the remarkably low off-current of 450 pA/μm at VD = -0.1 V. Strained trigate Ge NFET is demonstrated.",
keywords = "diode, germanium, junctionless, trigate",
author = "Chen, {Che Wei} and Chung, {Cheng Ting} and Chao-Hsin Chien",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 ; Conference date: 18-06-2014 Through 20-06-2014",
year = "2014",
month = mar,
day = "13",
doi = "10.1109/EDSSC.2014.7061261",
language = "English",
series = "2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014",
address = "美國",
}