Gate oxide thickness dependence of hot carrier induced degradation on PMOSFETs

Y. Hiruta*, H. Oyamatsu, H. S. Momose, H. Iwai, K. Maeguchi

*此作品的通信作者

研究成果: Conference contribution同行評審

8 引文 斯高帕斯(Scopus)

摘要

Gate oxide thickness dependences of pMOSFET hot carrier degradation characteristics were studied at 300K and 77K. It was found that a thin gate oxide pMOSFET shows superior characteristics regarding hot carrier degradation. Threshold voltage shift becomes very small, with reduction in the gate oxide thickness, due to the tunneling effect. Interface state generation increases with the gate oxide thickness reduction. Fortunately, however, it is not enough to affect device characteristics. It was found that the interface state increase is described by the gate current uniquely, independently from the gate oxide thickness, bias condition, and temperature.

原文English
主出版物標題ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
編輯Anton Heuberger, Heiner Ryssel, Peter Lange
發行者IEEE Computer Society
頁面732-735
頁數4
ISBN(電子)0387510001
ISBN(列印)9780387510002
DOIs
出版狀態Published - 1989
事件19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany
持續時間: 11 9月 198914 9月 1989

出版系列

名字European Solid-State Device Research Conference
ISSN(列印)1930-8876

Conference

Conference19th European Solid State Device Research Conference, ESSDERC 1989
國家/地區Germany
城市Berlin
期間11/09/8914/09/89

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