Gate oxide thickness dependence of hot carrier induced degradation on PMOSFETs

Y. Hiruta; H. Oyamatsu; H. S. Momose; H. Iwai; K. Maeguchi

doi:10.1007/978-3-642-52314-4_154

Gate oxide thickness dependence of hot carrier induced degradation on PMOSFETs

Y. Hiruta^*, H. Oyamatsu, H. S. Momose, H. Iwai, K. Maeguchi

^*此作品的通信作者

國際半導體產業學院

研究成果: Conference contribution › 同行評審

8 引文斯高帕斯（Scopus）

摘要

Gate oxide thickness dependences of pMOSFET hot carrier degradation characteristics were studied at 300K and 77K. It was found that a thin gate oxide pMOSFET shows superior characteristics regarding hot carrier degradation. Threshold voltage shift becomes very small, with reduction in the gate oxide thickness, due to the tunneling effect. Interface state generation increases with the gate oxide thickness reduction. Fortunately, however, it is not enough to affect device characteristics. It was found that the interface state increase is described by the gate current uniquely, independently from the gate oxide thickness, bias condition, and temperature.

原文	English
主出版物標題	ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
編輯	Anton Heuberger, Heiner Ryssel, Peter Lange
發行者	IEEE Computer Society
頁面	732-735
頁數	4
ISBN（電子）	0387510001
ISBN（列印）	9780387510002
DOIs	https://doi.org/10.1007/978-3-642-52314-4_154
出版狀態	Published - 1989
事件	19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany 持續時間: 11 9月 1989 → 14 9月 1989

出版系列

名字	European Solid-State Device Research Conference
ISSN（列印）	1930-8876

Conference

Conference	19th European Solid State Device Research Conference, ESSDERC 1989
國家/地區	Germany
城市	Berlin
期間	11/09/89 → 14/09/89

存取文件

10.1007/978-3-642-52314-4_154

其它文件與鏈接

Link to publication in Scopus

引用此

Hiruta, Y., Oyamatsu, H., Momose, H. S., Iwai, H., & Maeguchi, K. (1989). Gate oxide thickness dependence of hot carrier induced degradation on PMOSFETs. 於 A. Heuberger, H. Ryssel, & P. Lange (編輯), ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference (頁 732-735). [5436496] (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1007/978-3-642-52314-4_154

@inproceedings{c6789ec36b9d4515aefa395bf06a0c32,

title = "Gate oxide thickness dependence of hot carrier induced degradation on PMOSFETs",

abstract = "Gate oxide thickness dependences of pMOSFET hot carrier degradation characteristics were studied at 300K and 77K. It was found that a thin gate oxide pMOSFET shows superior characteristics regarding hot carrier degradation. Threshold voltage shift becomes very small, with reduction in the gate oxide thickness, due to the tunneling effect. Interface state generation increases with the gate oxide thickness reduction. Fortunately, however, it is not enough to affect device characteristics. It was found that the interface state increase is described by the gate current uniquely, independently from the gate oxide thickness, bias condition, and temperature.",

author = "Y. Hiruta and H. Oyamatsu and Momose, {H. S.} and H. Iwai and K. Maeguchi",

year = "1989",

doi = "10.1007/978-3-642-52314-4_154",

language = "English",

isbn = "9780387510002",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "732--735",

editor = "Anton Heuberger and Heiner Ryssel and Peter Lange",

booktitle = "ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference",

address = "United States",

note = "null ; Conference date: 11-09-1989 Through 14-09-1989",

}

Hiruta, Y, Oyamatsu, H, Momose, HS, Iwai, H & Maeguchi, K 1989, Gate oxide thickness dependence of hot carrier induced degradation on PMOSFETs. 於 A Heuberger, H Ryssel & P Lange (編輯), ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference., 5436496, European Solid-State Device Research Conference, IEEE Computer Society, 頁 732-735, 19th European Solid State Device Research Conference, ESSDERC 1989, Berlin, Germany, 11/09/89. https://doi.org/10.1007/978-3-642-52314-4_154

Gate oxide thickness dependence of hot carrier induced degradation on PMOSFETs. / Hiruta, Y.; Oyamatsu, H.; Momose, H. S. 等.

ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. 編輯 / Anton Heuberger; Heiner Ryssel; Peter Lange. IEEE Computer Society, 1989. p. 732-735 5436496 (European Solid-State Device Research Conference).

研究成果: Conference contribution › 同行評審

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AU - Oyamatsu, H.

AU - Momose, H. S.

AU - Iwai, H.

AU - Maeguchi, K.

PY - 1989

Y1 - 1989

N2 - Gate oxide thickness dependences of pMOSFET hot carrier degradation characteristics were studied at 300K and 77K. It was found that a thin gate oxide pMOSFET shows superior characteristics regarding hot carrier degradation. Threshold voltage shift becomes very small, with reduction in the gate oxide thickness, due to the tunneling effect. Interface state generation increases with the gate oxide thickness reduction. Fortunately, however, it is not enough to affect device characteristics. It was found that the interface state increase is described by the gate current uniquely, independently from the gate oxide thickness, bias condition, and temperature.

AB - Gate oxide thickness dependences of pMOSFET hot carrier degradation characteristics were studied at 300K and 77K. It was found that a thin gate oxide pMOSFET shows superior characteristics regarding hot carrier degradation. Threshold voltage shift becomes very small, with reduction in the gate oxide thickness, due to the tunneling effect. Interface state generation increases with the gate oxide thickness reduction. Fortunately, however, it is not enough to affect device characteristics. It was found that the interface state increase is described by the gate current uniquely, independently from the gate oxide thickness, bias condition, and temperature.

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DO - 10.1007/978-3-642-52314-4_154

M3 - Conference contribution

AN - SCOPUS:84907829623

SN - 9780387510002

T3 - European Solid-State Device Research Conference

SP - 732

EP - 735

BT - ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference

A2 - Heuberger, Anton

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A2 - Lange, Peter

PB - IEEE Computer Society

Y2 - 11 September 1989 through 14 September 1989

ER -

Hiruta Y, Oyamatsu H, Momose HS, Iwai H, Maeguchi K. Gate oxide thickness dependence of hot carrier induced degradation on PMOSFETs. 於 Heuberger A, Ryssel H, Lange P, 編輯, ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. IEEE Computer Society. 1989. p. 732-735. 5436496. (European Solid-State Device Research Conference). doi: 10.1007/978-3-642-52314-4_154

Gate oxide thickness dependence of hot carrier induced degradation on PMOSFETs

摘要

出版系列

Conference

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