Gate-oxide reliability on CMOS analog amplifiers in a 130-nm low-voltage CMOS processes

Jung Sheng Chen; Ming-Dou Ker

doi:10.1109/IPFA.2006.250994

Gate-oxide reliability on CMOS analog amplifiers in a 130-nm low-voltage CMOS processes

Jung Sheng Chen^*, Ming-Dou Ker

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

4 引文斯高帕斯（Scopus）

摘要

The effect of gate-oxide reliability in MOSFET on common-source amplifiers is investigated with the non-stacked and stacked structures in a 130-nm low-voltage CMOS process. The supply voltage of 2.5 V is applied on the amplifiers to accelerate and observe the impact of gate-oxide reliability on circuit performances including small-signal gain, unity-gain frequency, and output DC voltage level under DC stress and AC stress with DC offset, respectively. The small-signal parameters of amplifier with non-stacked structure strongly degrade under such overstress conditions. The gate-oxide reliability in analog circuit can be improved by stacked structure for small-signal input and output applications.

原文	English
主出版物標題	Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
頁面	45-48
頁數	4
DOIs	https://doi.org/10.1109/IPFA.2006.250994
出版狀態	Published - 2006
事件	13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 - Singapore, Singapore 持續時間: 3 7月 2006 → 7 7月 2006

出版系列

名字	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
國家/地區	Singapore
城市	Singapore
期間	3/07/06 → 7/07/06

存取文件

10.1109/IPFA.2006.250994

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Link to publication in Scopus

引用此

Chen, J. S., & Ker, M.-D. (2006). Gate-oxide reliability on CMOS analog amplifiers in a 130-nm low-voltage CMOS processes. 於 Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 (頁 45-48). 文章 4017019 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2006.250994

@inproceedings{df9bc5d1fc6249719d187f19f53e6c29,

title = "Gate-oxide reliability on CMOS analog amplifiers in a 130-nm low-voltage CMOS processes",

abstract = "The effect of gate-oxide reliability in MOSFET on common-source amplifiers is investigated with the non-stacked and stacked structures in a 130-nm low-voltage CMOS process. The supply voltage of 2.5 V is applied on the amplifiers to accelerate and observe the impact of gate-oxide reliability on circuit performances including small-signal gain, unity-gain frequency, and output DC voltage level under DC stress and AC stress with DC offset, respectively. The small-signal parameters of amplifier with non-stacked structure strongly degrade under such overstress conditions. The gate-oxide reliability in analog circuit can be improved by stacked structure for small-signal input and output applications.",

author = "Chen, {Jung Sheng} and Ming-Dou Ker",

year = "2006",

doi = "10.1109/IPFA.2006.250994",

language = "English",

isbn = "1424402069",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

pages = "45--48",

booktitle = "Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006",

note = "13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 ; Conference date: 03-07-2006 Through 07-07-2006",

}

Chen, JS & Ker, M-D 2006, Gate-oxide reliability on CMOS analog amplifiers in a 130-nm low-voltage CMOS processes. 於 Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006., 4017019, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 頁 45-48, 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006, Singapore, Singapore, 3/07/06. https://doi.org/10.1109/IPFA.2006.250994

Gate-oxide reliability on CMOS analog amplifiers in a 130-nm low-voltage CMOS processes. / Chen, Jung Sheng; Ker, Ming-Dou.
Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. p. 45-48 4017019 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

研究成果: Conference contribution › 同行評審

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AU - Chen, Jung Sheng

AU - Ker, Ming-Dou

PY - 2006

Y1 - 2006

N2 - The effect of gate-oxide reliability in MOSFET on common-source amplifiers is investigated with the non-stacked and stacked structures in a 130-nm low-voltage CMOS process. The supply voltage of 2.5 V is applied on the amplifiers to accelerate and observe the impact of gate-oxide reliability on circuit performances including small-signal gain, unity-gain frequency, and output DC voltage level under DC stress and AC stress with DC offset, respectively. The small-signal parameters of amplifier with non-stacked structure strongly degrade under such overstress conditions. The gate-oxide reliability in analog circuit can be improved by stacked structure for small-signal input and output applications.

AB - The effect of gate-oxide reliability in MOSFET on common-source amplifiers is investigated with the non-stacked and stacked structures in a 130-nm low-voltage CMOS process. The supply voltage of 2.5 V is applied on the amplifiers to accelerate and observe the impact of gate-oxide reliability on circuit performances including small-signal gain, unity-gain frequency, and output DC voltage level under DC stress and AC stress with DC offset, respectively. The small-signal parameters of amplifier with non-stacked structure strongly degrade under such overstress conditions. The gate-oxide reliability in analog circuit can be improved by stacked structure for small-signal input and output applications.

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U2 - 10.1109/IPFA.2006.250994

DO - 10.1109/IPFA.2006.250994

M3 - Conference contribution

AN - SCOPUS:34250660618

SN - 1424402069

SN - 9781424402069

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

SP - 45

EP - 48

BT - Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006

T2 - 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006

Y2 - 3 July 2006 through 7 July 2006

ER -

Chen JS, Ker MD. Gate-oxide reliability on CMOS analog amplifiers in a 130-nm low-voltage CMOS processes. 於 Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006. 2006. p. 45-48. 4017019. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2006.250994

Gate-oxide reliability on CMOS analog amplifiers in a 130-nm low-voltage CMOS processes

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