Gate material dependence of process charging damage in thin gate oxide

A. Acovic*, A. Ray, J. Sun, J. Herman, T. Furukawa, R. Geiger, K. Beyer, V. McGahay, S. Greco, W. Abadeer

*此作品的通信作者

研究成果: Paper同行評審

1 引文 斯高帕斯(Scopus)

摘要

Effects of plasma induced charging on dielectric integrity in a CMOS technology with n- and p- type polysilicon gates have been studied in detail. We show that p-gates are much more sensitive to charging than n-gates. Charge to breakdown in capacitors with a large p-type polysilicon plate is also reduced by charging damage, in spite of their low antenna ratios. We attribute this sensitivity of p-type gates to the low QBD of p-type gate capacitors for electron injection from the gate. By optimizing the fabrication processes, the amount of charging damage has been reduced to a negligible value, and good quality gate oxide has been achieved. Care must be exercised when interpreting QBD and leakage data on capacitors, to eliminate the effects of process induced charging.

原文English
頁面160-163
頁數4
出版狀態Published - 1996
事件Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA
持續時間: 13 五月 199614 五月 1996

Conference

ConferenceProceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID
城市Santa Clara, CA, USA
期間13/05/9614/05/96

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