@inproceedings{ccec045716ec4431a922d318575fb78d,
title = "Gate-first low vt Al/TaN/Ir/HfLaO p-mosfet using simple laser annealing",
abstract = "Using excimer laser annealing and laser-reflective Al-covered gate, the self-aligned, gate-dielectric first and gate-electrode first Al/TaN/Ir/HfLaO p-MOSFET showed low threshold voltage (Vt) of -0.07 V and good peak hole mobility of 86 cm2/V-s at 1.5 nm equivalent-oxide thickness (EOT).",
author = "Su, {N. C.} and Wu, {C. H.} and Chang, {M. F.} and Huang, {J. Z.} and Wang, {S. J.} and Lee, {W. C.} and Po-Tsung Lee and Kao, {H. L.} and Albert Chin",
year = "2008",
doi = "10.1109/DRC.2008.4800739",
language = "English",
isbn = "9781424419425",
series = "Device Research Conference - Conference Digest, DRC",
pages = "71--72",
booktitle = "66th DRC Device Research Conference Digest, DRC 2008",
note = "66th DRC Device Research Conference Digest, DRC 2008 ; Conference date: 23-06-2008 Through 25-06-2008",
}