Gate dielectric material and process effects on distribution pattern of nano-resistors in solid-state incandescent light emitting devices

Physics & Astronomy

• distribution (property) 88%
• resistors 71%
• solid state 52%
• breakdown 15%
• embedding 10%
• capacitors 8%
• dielectric properties 8%
• defects 5%
• temperature 2%

Engineering & Materials Science

• Gate dielectrics 100%
• Resistors 68%
• Electric breakdown 26%
• MOS capacitors 18%
• Dielectric properties 14%
• Defects 8%
• Temperature 4%

Chemical Compounds

• Dielectric Material 61%
• Emissivity 14%
• Capacitor 10%
• Dielectric Property 10%
• Length 5%
• Time 3%