Gate Current in OFF-State MOSFET

Jian Chen*, Tung Yi Chan, Ping Keung Ko, Chen-Ming Hu

*此作品的通信作者

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

The source of the gate current in MOSFET’s due to an applied drain voltage with the gate grounded is studied. It is found that for 100 Å or thinner oxide, the gate current is due to Fowler-Nordheim (F-N) tunneling of electrons from the gate. With increasing oxide thickness, hot-hole injection becomes the dominant contribution to the gate current. This gate current can cause IDwalkout, which is a decrease in the gate-induced drain leakage current, and hole trapping which becomes important for device degradation study. It can also be used to advantage in EPROM erasure.

原文English
頁(從 - 到)203-205
頁數3
期刊IEEE Electron Device Letters
10
發行號5
DOIs
出版狀態Published - 5月 1989

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