Gate-all-around nanowire vertical tunneling FETs by ferroelectric internal voltage amplification

Narasimhulu Thoti, Yiming Li*

*此作品的通信作者

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

指紋

深入研究「Gate-all-around nanowire vertical tunneling FETs by ferroelectric internal voltage amplification」主題。共同形成了獨特的指紋。

Engineering & Materials Science

Chemical Compounds