Ga0.5in0.5P barrier layer for wet oxidation of AlAs

Shih Chang Lee*, Wei-I Lee

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

We study the stability of Ga0.5In0.5P and Al0.4Ga0.6As barrier layers for wet thermal oxidation of AlAs on GaAs. Samples with a Ga0.5In0.5P or Al0.4Ga0.6As barrier layer are oxidized in a water vapor environment under various oxidation conditions. The results of photoluminescence and secondary-ion mass spectrometry (SIMS) depth profile measurements indicate that the Ga0.5In0.5P barrier layer is more stable than the Al0.4Ga0.6As layer at higher oxidation temperatures and longer periods of oxidation time.

原文English
頁(從 - 到)2583-2584
頁數2
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
39
發行號5 A
DOIs
出版狀態Published - 1 5月 2000

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