GaSe1-xSx crystals for teraherz frequency range

Victor V. Atuchin, Yury M. Andreev, Sergei Yu Sarkisov, A. N. Morozov, Chih-Wei Luo, S. A. Ku

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

GaSe1-xSx single crystals has been grown by Bridgman-Stockbarger technique. Structural quality has been evaluated with TEM observation. Terahertz time-domain spectroscopy has been applied for measurements of the frequency-dependent optical constant of doped GaSe crystals as a function of s-content.

原文English
主出版物標題2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, EDM 2009
頁面96-99
頁數4
DOIs
出版狀態Published - 1 七月 2009
事件2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, EDM 2009 - Novosibirsk, Russian Federation
持續時間: 1 七月 20096 七月 2009

出版系列

名字International Workshop and Tutorials on Electron Devices and Materials, EDM - Proceedings
ISSN(列印)1815-3712

Conference

Conference2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, EDM 2009
國家/地區Russian Federation
城市Novosibirsk
期間1/07/096/07/09

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