GaSb-based mid infrared photonic crystal surface emitting lasers

Chien Hung Pan, Chien Hung Lin, Ting Yuan Chang, Tien-chang Lu, Chien Ping Lee

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

We demonstrated for the first time above room temperature (RT) GaSb-based mid-infrared photonic crystal surface emitting lasers (PCSELs). The lasers, under optical pumping, emitted at λ lasing ∼2.3μm, had a temperature insensitive line width of 0.3nm, and a threshold power density (P th ) ∼0.3KW/cm 2 at RT. Type-I InGaAsSb quantum wells were used as the active region, and the photonic crystal, a square lattice, was fabricated on the surface to provide optical feedback for laser operation and light coupling for surface emission. The PCSELs were operated at temperatures up to 350K with a small wavelength shift rate of 0.21 nm/K. The PCSELs with different air hole depth were studied. The effect of the etched depth on the laser performance was also investigated using numerical simulation based on the coupled-wave theory. Both the laser wavelength and the threshold power decrease as the depth of the PC becomes larger. The calculated results agree well with the experimental findings.

原文English
頁(從 - 到)11741-11747
頁數7
期刊Optics Express
23
發行號9
DOIs
出版狀態Published - 4 五月 2015

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