GaN transistors for power switching and high frequency applications

Naohiro Tsunami*, Yasuhiro Uemoto, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

We review our state-of-the-art GaN-based device technologies for power switching at low frequencies and high frequency operation aiming at future millimeter-wave communication systems. These two applications are emerging in addition to the widely investigated power amplifiers at microwave frequencies for cellular base stations. As for the power switching GaN devices, we present a novel device structure called Gate Injection Transistors (GIT), which enables normally-off operation with high drain current. Here we also present the world highest breakdown voltage of 10400V in AlGaN/GaN HFETs. In the last part of this paper, we present GaN-based MIS-HFETs which exhibits as high fnax as 203GHz. The successful integration of low-loss microstrip lines with via-holes onto sapphire enables compact 3-stage K-band amplifier MMIC of which a small-signal gain is as high as 22dB at 26GHz with a 3dB bandwidth of 25-29GHz. The presented devices are promising for the two emerging future applications demonstrating high enough potential of GaN-based transistors.

原文English
主出版物標題2008 IEEE CSIC Symposium
主出版物子標題GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008
DOIs
出版狀態Published - 29 十二月 2008
事件2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, 2008 - Monterey, CA, United States
持續時間: 12 十月 200815 十月 2008

出版系列

名字2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008

Conference

Conference2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, 2008
國家/地區United States
城市Monterey, CA
期間12/10/0815/10/08

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