GaN schottky barrier photodetectors

S. J. Chang; S. M. Wang; P. C. Chang; Cheng-Huang Kuo; S. J. Young; T. P. Chen; S. L. Wu; B. R. Huang

doi:10.1109/JSEN.2010.2045889

GaN schottky barrier photodetectors

S. J. Chang
, S. M. Wang
, P. C. Chang
, Cheng-Huang Kuo
, S. J. Young
, T. P. Chen
, S. L. Wu
, B. R. Huang

光電學院

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

摘要

We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10^-10 W and 2.26× 10⁹ cmHz 0.5 W^-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10^-6 W and 4.44× 10⁵ cmHz 0.5W^-1, respectively, for the PD prepared on a conventional sapphire substrate.

原文	English
文章編號	5482027
頁（從 - 到）	1609-1614
頁數	6
期刊	IEEE Sensors Journal
卷	10
發行號	10
DOIs	https://doi.org/10.1109/JSEN.2010.2045889
出版狀態	Published - 2010

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10.1109/JSEN.2010.2045889

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title = "GaN schottky barrier photodetectors",

abstract = "We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10-10 W and 2.26× 109 cmHz 0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10-6 W and 4.44× 105 cmHz 0.5W-1, respectively, for the PD prepared on a conventional sapphire substrate.",

keywords = "Nanorod template, noise, photodetector, ultraviolet",

author = "Chang, \{S. J.\} and Wang, \{S. M.\} and Chang, \{P. C.\} and Cheng-Huang Kuo and Young, \{S. J.\} and Chen, \{T. P.\} and Wu, \{S. L.\} and Huang, \{B. R.\}",

year = "2010",

doi = "10.1109/JSEN.2010.2045889",

language = "English",

volume = "10",

pages = "1609--1614",

journal = "IEEE Sensors Journal",

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TY - JOUR

T1 - GaN schottky barrier photodetectors

AU - Chang, S. J.

AU - Wang, S. M.

AU - Chang, P. C.

AU - Kuo, Cheng-Huang

AU - Young, S. J.

AU - Chen, T. P.

AU - Wu, S. L.

AU - Huang, B. R.

PY - 2010

Y1 - 2010

N2 - We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10-10 W and 2.26× 109 cmHz 0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10-6 W and 4.44× 105 cmHz 0.5W-1, respectively, for the PD prepared on a conventional sapphire substrate.

AB - We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10-10 W and 2.26× 109 cmHz 0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10-6 W and 4.44× 105 cmHz 0.5W-1, respectively, for the PD prepared on a conventional sapphire substrate.

KW - Nanorod template

KW - noise

KW - photodetector

KW - ultraviolet

UR - https://www.scopus.com/pages/publications/77955399652

U2 - 10.1109/JSEN.2010.2045889

DO - 10.1109/JSEN.2010.2045889

M3 - Article

AN - SCOPUS:77955399652

SN - 1530-437X

VL - 10

SP - 1609

EP - 1614

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

IS - 10

M1 - 5482027

ER -

GaN schottky barrier photodetectors

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