@inproceedings{76aeb4e4ed2b48d6982fa7f14724a08d,
title = "GaN Schottky barrier photodetectors with multi-MgN/GaN buffer",
abstract = "GaN Schottky barrier photodetectors (PDs) separately prepared with a conventional single low-temperature (LT) GaN buffer layer and a multi-MgN/GaN buffer layer were both fabricated. It was found that we could reduce threading dislocation (TD) density and thus improve crystal quality of the GaN PDs by using the multi-MgN/GaN buffer layer. With a 2 V reverse bias, it was found that the reverse leakage currents measured from PDs with single LT GaN buffer layer and that with multi-MgN/GaN buffer layer were 4.57×10-6 and 1.44×10-12 A, respectively. It was also found that we could use the multi-MgN/GaN buffer layer to suppress photoconductive gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.",
author = "Lee, {K. H.} and Chang, {P. C.} and Chang, {S. J.} and Wang, {Y. C.} and Cheng-Huang Kuo and Wu, {S. L.}",
year = "2008",
month = dec,
day = "1",
doi = "10.1109/EDSSC.2008.4760683",
language = "English",
isbn = "9781424425402",
series = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",
booktitle = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",
note = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 08-12-2008 Through 10-12-2008",
}