GaN schottky barrier photodetectors

S. J. Chang; S. M. Wang; P. C. Chang; Cheng-Huang Kuo; S. J. Young; T. P. Chen; S. L. Wu; B. R. Huang

doi:10.1109/JSEN.2010.2045889

GaN schottky barrier photodetectors

S. J. Chang, S. M. Wang, P. C. Chang, Cheng-Huang Kuo, S. J. Young, T. P. Chen, S. L. Wu, B. R. Huang

光電學院

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10^-10 W and 2.26× 10⁹ cmHz 0.5 W^-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10^-6 W and 4.44× 10⁵ cmHz 0.5W^-1, respectively, for the PD prepared on a conventional sapphire substrate.

原文	English
文章編號	5482027
頁（從 - 到）	1609-1614
頁數	6
期刊	IEEE Sensors Journal
卷	10
發行號	10
DOIs	https://doi.org/10.1109/JSEN.2010.2045889
出版狀態	Published - 13 8月 2010

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10.1109/JSEN.2010.2045889

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abstract = "We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10-10 W and 2.26× 109 cmHz 0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10-6 W and 4.44× 105 cmHz 0.5W-1, respectively, for the PD prepared on a conventional sapphire substrate.",

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author = "Chang, {S. J.} and Wang, {S. M.} and Chang, {P. C.} and Cheng-Huang Kuo and Young, {S. J.} and Chen, {T. P.} and Wu, {S. L.} and Huang, {B. R.}",

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AU - Chang, S. J.

AU - Wang, S. M.

AU - Chang, P. C.

AU - Kuo, Cheng-Huang

AU - Young, S. J.

AU - Chen, T. P.

AU - Wu, S. L.

AU - Huang, B. R.

PY - 2010/8/13

Y1 - 2010/8/13

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AB - We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10-10 W and 2.26× 109 cmHz 0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10-6 W and 4.44× 105 cmHz 0.5W-1, respectively, for the PD prepared on a conventional sapphire substrate.

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GaN schottky barrier photodetectors

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