GaN schottky barrier photodetectors

S. J. Chang; S. M. Wang; P. C. Chang; Cheng-Huang Kuo; S. J. Young; T. P. Chen; S. L. Wu; B. R. Huang

doi:10.1109/JSEN.2010.2045889

GaN schottky barrier photodetectors

S. J. Chang, S. M. Wang, P. C. Chang, Cheng-Huang Kuo, S. J. Young, T. P. Chen, S. L. Wu, B. R. Huang

光電學院

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

摘要

We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10^-10 W and 2.26× 10⁹ cmHz 0.5 W^-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10^-6 W and 4.44× 10⁵ cmHz 0.5W^-1, respectively, for the PD prepared on a conventional sapphire substrate.

原文	English
文章編號	5482027
頁（從 - 到）	1609-1614
頁數	6
期刊	IEEE Sensors Journal
卷	10
發行號	10
DOIs	https://doi.org/10.1109/JSEN.2010.2045889
出版狀態	Published - 13 8月 2010

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author = "Chang, {S. J.} and Wang, {S. M.} and Chang, {P. C.} and Cheng-Huang Kuo and Young, {S. J.} and Chen, {T. P.} and Wu, {S. L.} and Huang, {B. R.}",

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AU - Chang, S. J.

AU - Wang, S. M.

AU - Chang, P. C.

AU - Kuo, Cheng-Huang

AU - Young, S. J.

AU - Chen, T. P.

AU - Wu, S. L.

AU - Huang, B. R.

PY - 2010/8/13

Y1 - 2010/8/13

N2 - We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10-10 W and 2.26× 109 cmHz 0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10-6 W and 4.44× 105 cmHz 0.5W-1, respectively, for the PD prepared on a conventional sapphire substrate.

AB - We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D *) were 7.00 × 10-10 W and 2.26× 109 cmHz 0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D * were 3.56 × 10-6 W and 4.44× 105 cmHz 0.5W-1, respectively, for the PD prepared on a conventional sapphire substrate.

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GaN schottky barrier photodetectors

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