GaN MSM photodetectors with TiW transparent electrodes

C. K. Wang; S. J. Chang; Y. K. Su; C. S. Chang; Y. Z. Chiou; Cheng-Huang Kuo; T. K. Lin; T. K. Ko; J. J. Tang

doi:10.1016/j.mseb.2004.05.002

GaN MSM photodetectors with TiW transparent electrodes

C. K. Wang, S. J. Chang^*, Y. K. Su, C. S. Chang, Y. Z. Chiou, Cheng-Huang Kuo, T. K. Lin, T. K. Ko, J. J. Tang

^*此作品的通信作者

照明與能源光電研究所

研究成果: Article › 同行評審

34 引文斯高帕斯（Scopus）

摘要

TiW films were deposited onto glass substrates and GaN epitaxial layers by RF magnetron sputtering. It was found that TiW film deposited with a 300 W RF power could provide us a high transmittance and a low resistivity. GaN-based ultraviolet metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that photocurrent to dark current contrast ratios were 4.35, 4.6 × 10² and 5.7 × 10⁴ for the pholodetectors with ITO, TiN, and TiW electrodes, respectively. The large photocurrent to dark current contrast ratio could be attributed mainly to the fact that TiW can form a high Schottky barrier height on the surface of u-GaN epitaxial layers.

原文	English
頁（從 - 到）	25-29
頁數	5
期刊	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
卷	112
發行號	1
DOIs	https://doi.org/10.1016/j.mseb.2004.05.002
出版狀態	Published - 15 9月 2004

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@article{e9f6d783295145b7b12bccb2fa8385ca,

title = "GaN MSM photodetectors with TiW transparent electrodes",

abstract = "TiW films were deposited onto glass substrates and GaN epitaxial layers by RF magnetron sputtering. It was found that TiW film deposited with a 300 W RF power could provide us a high transmittance and a low resistivity. GaN-based ultraviolet metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that photocurrent to dark current contrast ratios were 4.35, 4.6 × 102 and 5.7 × 104 for the pholodetectors with ITO, TiN, and TiW electrodes, respectively. The large photocurrent to dark current contrast ratio could be attributed mainly to the fact that TiW can form a high Schottky barrier height on the surface of u-GaN epitaxial layers.",

keywords = "GaN, ITO, MSM, Photodetectors, TiN, TiW, UV",

author = "Wang, {C. K.} and Chang, {S. J.} and Su, {Y. K.} and Chang, {C. S.} and Chiou, {Y. Z.} and Cheng-Huang Kuo and Lin, {T. K.} and Ko, {T. K.} and Tang, {J. J.}",

year = "2004",

month = sep,

day = "15",

doi = "10.1016/j.mseb.2004.05.002",

language = "English",

volume = "112",

pages = "25--29",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier Ltd",

number = "1",

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TY - JOUR

T1 - GaN MSM photodetectors with TiW transparent electrodes

AU - Wang, C. K.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chang, C. S.

AU - Chiou, Y. Z.

AU - Kuo, Cheng-Huang

AU - Lin, T. K.

AU - Ko, T. K.

AU - Tang, J. J.

PY - 2004/9/15

Y1 - 2004/9/15

N2 - TiW films were deposited onto glass substrates and GaN epitaxial layers by RF magnetron sputtering. It was found that TiW film deposited with a 300 W RF power could provide us a high transmittance and a low resistivity. GaN-based ultraviolet metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that photocurrent to dark current contrast ratios were 4.35, 4.6 × 102 and 5.7 × 104 for the pholodetectors with ITO, TiN, and TiW electrodes, respectively. The large photocurrent to dark current contrast ratio could be attributed mainly to the fact that TiW can form a high Schottky barrier height on the surface of u-GaN epitaxial layers.

AB - TiW films were deposited onto glass substrates and GaN epitaxial layers by RF magnetron sputtering. It was found that TiW film deposited with a 300 W RF power could provide us a high transmittance and a low resistivity. GaN-based ultraviolet metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that photocurrent to dark current contrast ratios were 4.35, 4.6 × 102 and 5.7 × 104 for the pholodetectors with ITO, TiN, and TiW electrodes, respectively. The large photocurrent to dark current contrast ratio could be attributed mainly to the fact that TiW can form a high Schottky barrier height on the surface of u-GaN epitaxial layers.

KW - GaN

KW - ITO

KW - MSM

KW - Photodetectors

KW - TiN

KW - TiW

KW - UV

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U2 - 10.1016/j.mseb.2004.05.002

DO - 10.1016/j.mseb.2004.05.002

M3 - Article

AN - SCOPUS:3843076292

SN - 0921-5107

VL - 112

SP - 25

EP - 29

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1

ER -

GaN MSM photodetectors with TiW transparent electrodes

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