GaN metal-semiconductor-metal photodetectors prepared on nanorod template

S. J. Chang; S. M. Wang; P. C. Chang; Cheng-Huang Kuo; S. J. Young; T. P. Chen

doi:10.1109/LPT.2010.2043354

GaN metal-semiconductor-metal photodetectors prepared on nanorod template

S. J. Chang, S. M. Wang, P. C. Chang, Cheng-Huang Kuo, S. J. Young, T. P. Chen

照明與能源光電研究所

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

摘要

The authors report the fabrication of GaN-based metalsemiconductormetal photodetectors (PDs) on a conventional flat sapphire substrate and on a nanorod template. Compared with the PD prepared on the flat sapphire substrate, it was found that leakage current of the PD prepared on the nanorod template was significantly smaller due to the improved crystal quality. It was also found that we can reduce the photoconductive gain and enhance ultraviolet-to-visible rejection ratio by using the nanorod template.

原文	English
文章編號	14
頁（從 - 到）	625-627
頁數	3
期刊	IEEE Photonics Technology Letters
卷	22
發行號	9
DOIs	https://doi.org/10.1109/LPT.2010.2043354
出版狀態	Published - 16 4月 2010

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10.1109/LPT.2010.2043354

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AU - Wang, S. M.

AU - Chang, P. C.

AU - Kuo, Cheng-Huang

AU - Young, S. J.

AU - Chen, T. P.

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AB - The authors report the fabrication of GaN-based metalsemiconductormetal photodetectors (PDs) on a conventional flat sapphire substrate and on a nanorod template. Compared with the PD prepared on the flat sapphire substrate, it was found that leakage current of the PD prepared on the nanorod template was significantly smaller due to the improved crystal quality. It was also found that we can reduce the photoconductive gain and enhance ultraviolet-to-visible rejection ratio by using the nanorod template.

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KW - Ultraviolet (UV)

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GaN metal-semiconductor-metal photodetectors prepared on nanorod template

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