GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle

P. S. Yeh; C. C. Chang; Y. T. Chen; D. W. Lin; J. S. Liou; C. C. Wu; J. H. He; Hao-Chung Kuo

doi:10.1063/1.4972182

GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle

P. S. Yeh, C. C. Chang, Y. T. Chen, D. W. Lin, J. S. Liou, C. C. Wu, J. H. He, Hao-Chung Kuo

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摘要

A GaN-based vertical-cavity surface emitting laser (VCSEL) structure featuring a silicon-diffusion-defined current blocking layer for lateral confinement is described. Sub-milliamp threshold currents were achieved for both 3- and 5-μm-aperture VCSELs under continuous-wave operation at room temperature. The vertical cavity was defined by a top dielectric distributed Bragg reflector (DBR) and a bottom epitaxial DBR. The emission spectrum exhibited a single peak at 411.2 nm with a linewidth of 0.4 nm and a side mode suppression ratio of more than 10 dB before device packaging. The full-width-at-half-maximum divergence angle of the 3-μm-aperture VCSEL was as small as approximately 5° which is the lowest number reported. These results implied the 3-μm-aperture VCSEL was in near single-mode operation.

原文	English
文章編號	241103
期刊	Applied Physics Letters
卷	109
發行號	24
DOIs	https://doi.org/10.1063/1.4972182
出版狀態	Published - 12 12月 2016

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abstract = "A GaN-based vertical-cavity surface emitting laser (VCSEL) structure featuring a silicon-diffusion-defined current blocking layer for lateral confinement is described. Sub-milliamp threshold currents were achieved for both 3- and 5-μm-aperture VCSELs under continuous-wave operation at room temperature. The vertical cavity was defined by a top dielectric distributed Bragg reflector (DBR) and a bottom epitaxial DBR. The emission spectrum exhibited a single peak at 411.2 nm with a linewidth of 0.4 nm and a side mode suppression ratio of more than 10 dB before device packaging. The full-width-at-half-maximum divergence angle of the 3-μm-aperture VCSEL was as small as approximately 5° which is the lowest number reported. These results implied the 3-μm-aperture VCSEL was in near single-mode operation.",

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AU - Yeh, P. S.

AU - Chang, C. C.

AU - Chen, Y. T.

AU - Lin, D. W.

AU - Liou, J. S.

AU - Wu, C. C.

AU - He, J. H.

AU - Kuo, Hao-Chung

PY - 2016/12/12

Y1 - 2016/12/12

N2 - A GaN-based vertical-cavity surface emitting laser (VCSEL) structure featuring a silicon-diffusion-defined current blocking layer for lateral confinement is described. Sub-milliamp threshold currents were achieved for both 3- and 5-μm-aperture VCSELs under continuous-wave operation at room temperature. The vertical cavity was defined by a top dielectric distributed Bragg reflector (DBR) and a bottom epitaxial DBR. The emission spectrum exhibited a single peak at 411.2 nm with a linewidth of 0.4 nm and a side mode suppression ratio of more than 10 dB before device packaging. The full-width-at-half-maximum divergence angle of the 3-μm-aperture VCSEL was as small as approximately 5° which is the lowest number reported. These results implied the 3-μm-aperture VCSEL was in near single-mode operation.

AB - A GaN-based vertical-cavity surface emitting laser (VCSEL) structure featuring a silicon-diffusion-defined current blocking layer for lateral confinement is described. Sub-milliamp threshold currents were achieved for both 3- and 5-μm-aperture VCSELs under continuous-wave operation at room temperature. The vertical cavity was defined by a top dielectric distributed Bragg reflector (DBR) and a bottom epitaxial DBR. The emission spectrum exhibited a single peak at 411.2 nm with a linewidth of 0.4 nm and a side mode suppression ratio of more than 10 dB before device packaging. The full-width-at-half-maximum divergence angle of the 3-μm-aperture VCSEL was as small as approximately 5° which is the lowest number reported. These results implied the 3-μm-aperture VCSEL was in near single-mode operation.

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GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle

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