GaN-based vertical-cavity surface-emitting laser incorporating a TiO2 high-index-contrast grating

Tsu Chi Chang, Ehsan Hashemi, Jörgen Bengtsson, Johan Gustavsson, Åsa Haglund, Tien Chang Lu

研究成果: Conference contribution同行評審

摘要

We demonstrate the first electrically injected GaN-based VCSEL with a TiO2 high-contrast grating (HCG) as the top mirror. The TiO2-HCG rested directly on the n-GaN without an airgap for mechanical stability. A VCSEL with an aperture diameter of 10 μm had a threshold current of 25 mA under pulsed operation at room temperature. Multiple longitudinal modes coexist around 400 nm, each TM-polarized with a linewidth of 0.5 nm (spectral resolution limited). This first demonstration of a TiO2-HCG VCSEL offers a new route to achieve polarization pinning and could also allow additional benefits such as post-growth setting of resonance wavelength.

原文English
主出版物標題Gallium Nitride Materials and Devices XV
編輯Hiroshi Fujioka, Hadis Morkoc, Ulrich T. Schwarz
發行者SPIE
ISBN(電子)9781510633230
DOIs
出版狀態Published - 1 1月 2020
事件Gallium Nitride Materials and Devices XV 2020 - San Francisco, United States
持續時間: 4 2月 20206 2月 2020

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
11280
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Conference

ConferenceGallium Nitride Materials and Devices XV 2020
國家/地區United States
城市San Francisco
期間4/02/206/02/20

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