@inproceedings{3982022068a34545be6d8de6964fe82e,
title = "GaN-based vertical-cavity surface-emitting laser incorporating a TiO2 high-index-contrast grating",
abstract = "We demonstrate the first electrically injected GaN-based VCSEL with a TiO2 high-contrast grating (HCG) as the top mirror. The TiO2-HCG rested directly on the n-GaN without an airgap for mechanical stability. A VCSEL with an aperture diameter of 10 μm had a threshold current of 25 mA under pulsed operation at room temperature. Multiple longitudinal modes coexist around 400 nm, each TM-polarized with a linewidth of 0.5 nm (spectral resolution limited). This first demonstration of a TiO2-HCG VCSEL offers a new route to achieve polarization pinning and could also allow additional benefits such as post-growth setting of resonance wavelength.",
keywords = "Electrically driven device, GaN, HCG, High-index-contrast grating, Micro-cavity, Polarization selectivity, TiO, VCSEL, Vertical-cavity surface-emitting laser",
author = "Chang, {Tsu Chi} and Ehsan Hashemi and J{\"o}rgen Bengtsson and Johan Gustavsson and {\AA}sa Haglund and Lu, {Tien Chang}",
year = "2020",
month = jan,
day = "1",
doi = "10.1117/12.2545315",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Hiroshi Fujioka and Hadis Morkoc and Schwarz, {Ulrich T.}",
booktitle = "Gallium Nitride Materials and Devices XV",
address = "美國",
note = "Gallium Nitride Materials and Devices XV 2020 ; Conference date: 04-02-2020 Through 06-02-2020",
}