GaN-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice current spreading layer

Cheng-Huang Kuo; Shoou Jinn Chang; Yan Kuin Su; Liang Wen Wu; Jone F. Chen; Jinn Kong Sheu; Ji Ming Tsai

doi:10.1143/JJAP.42.2270

GaN-based light emitting diodes with Si-doped In_0.23Ga_0.77N/GaN short period superlattice current spreading layer

Cheng-Huang Kuo^*, Shoou Jinn Chang, Yan Kuin Su, Liang Wen Wu, Jone F. Chen, Jinn Kong Sheu, Ji Ming Tsai

^*此作品的通信作者

照明與能源光電研究所

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The electrical properties of the Si-doped n⁺-In_0.23Ga_0.77N/GaN short period superlattice (SPS) structure were investigated and compared with those of a conventional Mg-doped GaN contact layer. The secondary ion mass spectroscopy (SIMS) data clearly shown a simultaneous presence of Si and In in the surface region. Temperature dependent Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n⁺-InGaN/GaN SPS top contact. It was also found that we could improve the output power and LED lifetime by employing such a SPS structure.

原文	English
頁（從 - 到）	2270-2272
頁數	3
期刊	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
卷	42
發行號	4 B
DOIs	https://doi.org/10.1143/JJAP.42.2270
出版狀態	Published - 4月 2003

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10.1143/JJAP.42.2270

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@article{8922caf30c394097a477073e6630d6ba,

title = "GaN-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice current spreading layer",

abstract = "The electrical properties of the Si-doped n+-In0.23Ga0.77N/GaN short period superlattice (SPS) structure were investigated and compared with those of a conventional Mg-doped GaN contact layer. The secondary ion mass spectroscopy (SIMS) data clearly shown a simultaneous presence of Si and In in the surface region. Temperature dependent Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the output power and LED lifetime by employing such a SPS structure.",

keywords = "Hall measurement, InGaN/GaN, LED, SPS, Tunneling contact",

author = "Cheng-Huang Kuo and Chang, {Shoou Jinn} and Su, {Yan Kuin} and Wu, {Liang Wen} and Chen, {Jone F.} and Sheu, {Jinn Kong} and Tsai, {Ji Ming}",

year = "2003",

month = apr,

doi = "10.1143/JJAP.42.2270",

language = "English",

volume = "42",

pages = "2270--2272",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

TY - JOUR

T1 - GaN-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice current spreading layer

AU - Kuo, Cheng-Huang

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Wu, Liang Wen

AU - Chen, Jone F.

AU - Sheu, Jinn Kong

AU - Tsai, Ji Ming

PY - 2003/4

Y1 - 2003/4

N2 - The electrical properties of the Si-doped n+-In0.23Ga0.77N/GaN short period superlattice (SPS) structure were investigated and compared with those of a conventional Mg-doped GaN contact layer. The secondary ion mass spectroscopy (SIMS) data clearly shown a simultaneous presence of Si and In in the surface region. Temperature dependent Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the output power and LED lifetime by employing such a SPS structure.

AB - The electrical properties of the Si-doped n+-In0.23Ga0.77N/GaN short period superlattice (SPS) structure were investigated and compared with those of a conventional Mg-doped GaN contact layer. The secondary ion mass spectroscopy (SIMS) data clearly shown a simultaneous presence of Si and In in the surface region. Temperature dependent Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the output power and LED lifetime by employing such a SPS structure.

KW - Hall measurement

KW - InGaN/GaN

KW - LED

KW - SPS

KW - Tunneling contact

UR - http://www.scopus.com/inward/record.url?scp=0037671956&partnerID=8YFLogxK

U2 - 10.1143/JJAP.42.2270

DO - 10.1143/JJAP.42.2270

M3 - Article

AN - SCOPUS:0037671956

SN - 0021-4922

VL - 42

SP - 2270

EP - 2272

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 4 B

ER -

GaN-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice current spreading layer

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GaN-based light emitting diodes with Si-doped In_0.23Ga_0.77N/GaN short period superlattice current spreading layer