GaN-based light-emitting diodes with pillar structures around the mesa region

P. H. Chen; Li Chuan Chang; C. H. Tsai; Y. C. Lee; Wei Chih Lai; Mount Learn Wu; Cheng-Huang Kuo; Jinn Kong Sheu

doi:10.1109/JQE.2010.2043336

GaN-based light-emitting diodes with pillar structures around the mesa region

P. H. Chen, Li Chuan Chang, C. H. Tsai, Y. C. Lee, Wei Chih Lai, Mount Learn Wu, Cheng-Huang Kuo, Jinn Kong Sheu

照明與能源光電研究所

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

This study presents the numerical and experimental demonstrations for the enhancement of light extraction efficiency in nitride-based light-emitting diodes (LEDs) with textured sidewall and micro-sized pillar waveguides (TSMPW) and nano-textured sidewall and nano-pillars (NTSNP) around the mesa. Using hydrothermal ZnO nanorods as the etching hard mask, the authors successfully formed vertical GaN nano-pillars on the mesa-etched regions. It was found that electrical characteristics observed from the proposed LEDs were near the same as the control samples without the pillars. Output power enhancement of LED with TSMPW was about 11% compared with conventional LEDs, and the output power enhancement of LED was greater than 45% upon replacement of TSMPW with the NTSNP structure. The light extraction efficiency enhancement factors of the LEDs with TSMPW and NTSNP structures simulated by finite-difference time-domain analysis were 16.6% and 23%, respectively.

原文	English
文章編號	5440023
頁（從 - 到）	1066-1071
頁數	6
期刊	IEEE Journal of Quantum Electronics
卷	46
發行號	7
DOIs	https://doi.org/10.1109/JQE.2010.2043336
出版狀態	Published - 13 4月 2010

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10.1109/JQE.2010.2043336

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title = "GaN-based light-emitting diodes with pillar structures around the mesa region",

abstract = "This study presents the numerical and experimental demonstrations for the enhancement of light extraction efficiency in nitride-based light-emitting diodes (LEDs) with textured sidewall and micro-sized pillar waveguides (TSMPW) and nano-textured sidewall and nano-pillars (NTSNP) around the mesa. Using hydrothermal ZnO nanorods as the etching hard mask, the authors successfully formed vertical GaN nano-pillars on the mesa-etched regions. It was found that electrical characteristics observed from the proposed LEDs were near the same as the control samples without the pillars. Output power enhancement of LED with TSMPW was about 11% compared with conventional LEDs, and the output power enhancement of LED was greater than 45% upon replacement of TSMPW with the NTSNP structure. The light extraction efficiency enhancement factors of the LEDs with TSMPW and NTSNP structures simulated by finite-difference time-domain analysis were 16.6% and 23%, respectively.",

keywords = "GaN, GaN nano-pillars, GaN-pillars, Light-emitting diode (LED), Textured side wall",

author = "Chen, {P. H.} and Chang, {Li Chuan} and Tsai, {C. H.} and Lee, {Y. C.} and Lai, {Wei Chih} and Wu, {Mount Learn} and Cheng-Huang Kuo and Sheu, {Jinn Kong}",

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T1 - GaN-based light-emitting diodes with pillar structures around the mesa region

AU - Chen, P. H.

AU - Chang, Li Chuan

AU - Tsai, C. H.

AU - Lee, Y. C.

AU - Lai, Wei Chih

AU - Wu, Mount Learn

AU - Kuo, Cheng-Huang

AU - Sheu, Jinn Kong

PY - 2010/4/13

Y1 - 2010/4/13

N2 - This study presents the numerical and experimental demonstrations for the enhancement of light extraction efficiency in nitride-based light-emitting diodes (LEDs) with textured sidewall and micro-sized pillar waveguides (TSMPW) and nano-textured sidewall and nano-pillars (NTSNP) around the mesa. Using hydrothermal ZnO nanorods as the etching hard mask, the authors successfully formed vertical GaN nano-pillars on the mesa-etched regions. It was found that electrical characteristics observed from the proposed LEDs were near the same as the control samples without the pillars. Output power enhancement of LED with TSMPW was about 11% compared with conventional LEDs, and the output power enhancement of LED was greater than 45% upon replacement of TSMPW with the NTSNP structure. The light extraction efficiency enhancement factors of the LEDs with TSMPW and NTSNP structures simulated by finite-difference time-domain analysis were 16.6% and 23%, respectively.

AB - This study presents the numerical and experimental demonstrations for the enhancement of light extraction efficiency in nitride-based light-emitting diodes (LEDs) with textured sidewall and micro-sized pillar waveguides (TSMPW) and nano-textured sidewall and nano-pillars (NTSNP) around the mesa. Using hydrothermal ZnO nanorods as the etching hard mask, the authors successfully formed vertical GaN nano-pillars on the mesa-etched regions. It was found that electrical characteristics observed from the proposed LEDs were near the same as the control samples without the pillars. Output power enhancement of LED with TSMPW was about 11% compared with conventional LEDs, and the output power enhancement of LED was greater than 45% upon replacement of TSMPW with the NTSNP structure. The light extraction efficiency enhancement factors of the LEDs with TSMPW and NTSNP structures simulated by finite-difference time-domain analysis were 16.6% and 23%, respectively.

KW - GaN

KW - GaN nano-pillars

KW - GaN-pillars

KW - Light-emitting diode (LED)

KW - Textured side wall

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DO - 10.1109/JQE.2010.2043336

M3 - Article

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SN - 0018-9197

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EP - 1071

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

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M1 - 5440023

ER -

GaN-based light-emitting diodes with pillar structures around the mesa region

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