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GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography
Ray-Hua Horng
*
, C. C. Yang, J. Y. Wu, S. H. Huang, C. E. Lee, D. S. Wuu
*
此作品的通信作者
電子研究所
研究成果
:
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同行評審
141
引文 斯高帕斯(Scopus)
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Keyphrases
Indium Tin Oxide
100%
Light-emitting Diodes
100%
GaN-based Light-emitting Diodes
100%
Window Layer
100%
Natural Lithography
100%
Surface Texture
75%
Power Output
50%
Polystyrene Spheres
50%
Surface Roughness
25%
Semiconductors
25%
Oxide Surfaces
25%
Etching Mask
25%
Indium Tin Oxide Film
25%
High Refractive Index
25%
Etching Conditions
25%
Planar Surfaces
25%
Escape Cone
25%
Internal Efficiency
25%
External Efficiency
25%
Narrow Escape
25%
Engineering
Light-Emitting Diode
100%
Texturing
100%
Indium-Tin-Oxide
100%
Lithography
100%
Output Power
33%
Textured Surface
33%
Refractive Index
16%
Oxide Film
16%
Shortfall
16%
Planar Surface
16%
External Efficiency
16%
Refractivity
16%
Material Science
Lithography
100%
Light-Emitting Diode
100%
Indium Tin Oxide
100%
Surface (Surface Science)
66%
Polystyrene
33%
Surface Roughness
16%
Oxide Film
16%
Refractive Index
16%
Oxide Surface
16%