@article{76b8e8884e0d48a6a7afbe95ed2dd267,
title = "GaN-Based light-emitting-diode with a p-InGaN layer",
abstract = "GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick p-In0.01\textbackslash{}Ga0.99N layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7\% to 23.8\%.",
keywords = "Efficiency droop, light emitting diode (LED), p-InGaN",
author = "Chen, \{P. H.\} and Cheng-Huang Kuo and Lai, \{W. C.\} and Chen, \{Yu An\} and Chang, \{L. C.\} and Chang, \{S. J.\}",
year = "2014",
month = mar,
doi = "10.1109/JDT.2013.2293767",
language = "English",
volume = "10",
pages = "204--207",
journal = "IEEE/OSA Journal of Display Technology",
issn = "1551-319X",
publisher = "IEEE Computer Society",
number = "3",
}