GaN-based light-emitting diode prepared on nano-inverted pyramid GaN template

C. W. Kuo; L. C. Chang; Cheng-Huang Kuo

doi:10.1109/LPT.2009.2031247

GaN-based light-emitting diode prepared on nano-inverted pyramid GaN template

C. W. Kuo^*, L. C. Chang, Cheng-Huang Kuo

^*此作品的通信作者

照明與能源光電研究所

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

Using self-aligned SiO₂ nano-spheres as an etching mask, the authors demonstrated the formation of a GaN-based nano-inverted pyramid (NIP) structure. It was found that crystal quality of the GaN epilayer prepared on an NIP/GaN template was significantly better than that prepared with conventional low-temperature GaN nucleation layer. With the NIP structure, it was found that 20-mA light-emitting-diode (LED) output power can be enhanced by 32%, as compared with the conventional LED.

原文	English
頁（從 - 到）	1645-1647
頁數	3
期刊	IEEE Photonics Technology Letters
卷	21
發行號	21
DOIs	https://doi.org/10.1109/LPT.2009.2031247
出版狀態	Published - 1 11月 2009

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abstract = "Using self-aligned SiO2 nano-spheres as an etching mask, the authors demonstrated the formation of a GaN-based nano-inverted pyramid (NIP) structure. It was found that crystal quality of the GaN epilayer prepared on an NIP/GaN template was significantly better than that prepared with conventional low-temperature GaN nucleation layer. With the NIP structure, it was found that 20-mA light-emitting-diode (LED) output power can be enhanced by 32%, as compared with the conventional LED.",

keywords = "InGaN-GaN, Light-emitting diode (LED), Nano, Template",

author = "Kuo, {C. W.} and Chang, {L. C.} and Cheng-Huang Kuo",

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T1 - GaN-based light-emitting diode prepared on nano-inverted pyramid GaN template

AU - Kuo, C. W.

AU - Chang, L. C.

AU - Kuo, Cheng-Huang

PY - 2009/11/1

Y1 - 2009/11/1

N2 - Using self-aligned SiO2 nano-spheres as an etching mask, the authors demonstrated the formation of a GaN-based nano-inverted pyramid (NIP) structure. It was found that crystal quality of the GaN epilayer prepared on an NIP/GaN template was significantly better than that prepared with conventional low-temperature GaN nucleation layer. With the NIP structure, it was found that 20-mA light-emitting-diode (LED) output power can be enhanced by 32%, as compared with the conventional LED.

AB - Using self-aligned SiO2 nano-spheres as an etching mask, the authors demonstrated the formation of a GaN-based nano-inverted pyramid (NIP) structure. It was found that crystal quality of the GaN epilayer prepared on an NIP/GaN template was significantly better than that prepared with conventional low-temperature GaN nucleation layer. With the NIP structure, it was found that 20-mA light-emitting-diode (LED) output power can be enhanced by 32%, as compared with the conventional LED.

KW - InGaN-GaN

KW - Light-emitting diode (LED)

KW - Nano

KW - Template

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DO - 10.1109/LPT.2009.2031247

M3 - Article

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EP - 1647

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 21

ER -

GaN-based light-emitting diode prepared on nano-inverted pyramid GaN template

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