GaN-based LEDs with AZO:Y upper contact

P. H. Chen, W. C. Lai, Li Chi Peng, Cheng-Huang Kuo, Chi Li Yeh, J. K. Sheu, C. J. Tun

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

We report the fabrication of GaN-based lightemitting diodes (LEDs) with ytterbium-doped alumina-zinc-oxide (AZO:Y) upper contact. It was found that AZO and AZO:Y are both highly transparent in the visible region with good thermal stability optically. However, it was found that AZO:Y is much more thermally stable electrically, as compared with AZO. Furthermore, it was found that the output power of GaN LEDs with AZO upper contact decreased significantly from 2.80 to 2.30 mW after 700 °C annealing. With the same annealing condition, it was found that output power decreased only slightly from 2.77 to 2.69 mW for the LEDs with AZO:Y upper contact.

原文English
文章編號5313952
頁(從 - 到)134-139
頁數6
期刊IEEE Transactions on Electron Devices
57
發行號1
DOIs
出版狀態Published - 1 一月 2010

指紋

深入研究「GaN-based LEDs with AZO:Y upper contact」主題。共同形成了獨特的指紋。

引用此