@article{05b887a0866c4d0ab6c40905c6349a5a,
title = "GaN-based LEDs with AZO:Y upper contact",
abstract = "We report the fabrication of GaN-based lightemitting diodes (LEDs) with ytterbium-doped alumina-zinc-oxide (AZO:Y) upper contact. It was found that AZO and AZO:Y are both highly transparent in the visible region with good thermal stability optically. However, it was found that AZO:Y is much more thermally stable electrically, as compared with AZO. Furthermore, it was found that the output power of GaN LEDs with AZO upper contact decreased significantly from 2.80 to 2.30 mW after 700 °C annealing. With the same annealing condition, it was found that output power decreased only slightly from 2.77 to 2.69 mW for the LEDs with AZO:Y upper contact.",
keywords = "AZO, AZO:Y, E-beam, Light-emitting diode (LED)",
author = "Chen, {P. H.} and Lai, {W. C.} and Peng, {Li Chi} and Cheng-Huang Kuo and Yeh, {Chi Li} and Sheu, {J. K.} and Tun, {C. J.}",
note = "Funding Information: Manuscript received May 28, 2009; revised August 18, 2009. First published November 6, 2009; current version published December 23, 2009. This work was supported by the National Science Council of Taiwan under Research Grant NSC-96-2221-E-006-290. The review of this paper was arranged by Editor S. Pearton.",
year = "2010",
month = jan,
doi = "10.1109/TED.2009.2033647",
language = "English",
volume = "57",
pages = "134--139",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",
}