Gallium nitride (gan) high-electron-mobility transistors with thick copper metallization featuring a power density of 8.2 w/mm for ka-band applications

Y. C. Lin, S. H. Chen, P. H. Lee, K. H. Lai, T. J. Huang, Edward Yi Chang, Heng Tung Hsu*

*此作品的通信作者

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

Copper-metallized gallium nitride (GaN) high-electron-mobility transistors (HEMTs) using a Ti/Pt/Ti diffusion barrier layer are fabricated and characterized for Ka-band applications. With a thick copper metallization layer of 6.8 m adopted, the device exhibited a high output power density of 8.2 W/mm and a power-added efficiency (PAE) of 26% at 38 GHz. Such superior performance is mainly attributed to the substantial reduction of the source and drain resistance of the device. In addition to improvement in the Radio Frequency (RF) performance, the successful integration of the thick copper metallization in the device technology further reduces the manufacturing cost, making it extremely promising for future fifth-generation mobile communication system applications at millimeter-wave frequencies.

原文English
文章編號222
頁(從 - 到)1-11
頁數11
期刊Micromachines
11
發行號2
DOIs
出版狀態Published - 2月 2020

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