Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting

Shyr Long Jeng, Chih Chiang Wu*, Wei-Hua Chieng

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

This study examined the output electrical characteristics - current-voltage (I-V) output, threshold voltage, and parasitic capacitance - of novel gallium nitride (GaN) power transistors. Experimental measurements revealed that both enhanced- and depletion-mode GaN field-effect transistors (FETs) containing different components of identical specifications yielded varied turn-off impedance; hence, the FET quality was inconsistent. Establishing standardized electrical measurements can provide necessary information for designers, and measuring transistor electrical characteristics establishes its equivalent-circuit model for circuit simulations. Moreover, high power output requires multiple parallel power transistors, and sorting the difference between similar electrical characteristics is critical in a power system. An isolated gate driver detection method is proposed for sorting the uniformity from the option of the turn-off characteristic. In addition, an equivalent-circuit model for GaN FETs is established on the basis of the measured electrical characteristics and verified experimentally.

原文English
文章編號478375
期刊Journal of Nanomaterials
2015
DOIs
出版狀態Published - 1 1月 2015

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