Gallium K-edge x-ray absorption study on Mg-doped GaN

Y. C. Pan; S. F. Wang; W. H. Lee; M. C. Lee; Wei-Kuo Chen; W. H. Chen; L. Y. Jang; J. F. Lee; C. I. Chiang; H. Chang; K. T. Wu; D. S. Lin

doi:10.1063/1.1337636

Gallium K-edge x-ray absorption study on Mg-doped GaN

Y. C. Pan^*, S. F. Wang, W. H. Lee, M. C. Lee, Wei-Kuo Chen, W. H. Chen, L. Y. Jang, J. F. Lee, C. I. Chiang, H. Chang, K. T. Wu, D. S. Lin

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

Ga K-edge x-ray absorption measurements were employed to investigate Mg-doping effects in GaN samples. Strong polarization-dependent x-ray absorption near-edge structures become less pronounced with increasing doping concentration, indicating the formation of a mixing-phase structure of cubic and hexagonal phases. Analysis of the extended x-ray absorption region of the spectra revealed doping-related defects such as vacancies, substitutions, and interstitial occupations. They were formed anisotropically in the crystal c axis direction and its perpendiculars. Disorderliness arising from phase mix and defects is believed to have lowered the Debye temperature of the doped GaN films and caused the destructive interference of the absorption fine-structure oscillation functions. These effects were taken into account for the observed large coordination number reductions in our samples.

原文	English
頁（從 - 到）	31-33
頁數	3
期刊	Applied Physics Letters
卷	78
發行號	1
DOIs	https://doi.org/10.1063/1.1337636
出版狀態	Published - 1 1月 2001

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@article{21e5992e18684a4c897cf2b251af9b44,

title = "Gallium K-edge x-ray absorption study on Mg-doped GaN",

abstract = "Ga K-edge x-ray absorption measurements were employed to investigate Mg-doping effects in GaN samples. Strong polarization-dependent x-ray absorption near-edge structures become less pronounced with increasing doping concentration, indicating the formation of a mixing-phase structure of cubic and hexagonal phases. Analysis of the extended x-ray absorption region of the spectra revealed doping-related defects such as vacancies, substitutions, and interstitial occupations. They were formed anisotropically in the crystal c axis direction and its perpendiculars. Disorderliness arising from phase mix and defects is believed to have lowered the Debye temperature of the doped GaN films and caused the destructive interference of the absorption fine-structure oscillation functions. These effects were taken into account for the observed large coordination number reductions in our samples.",

author = "Pan, {Y. C.} and Wang, {S. F.} and Lee, {W. H.} and Lee, {M. C.} and Wei-Kuo Chen and Chen, {W. H.} and Jang, {L. Y.} and Lee, {J. F.} and Chiang, {C. I.} and H. Chang and Wu, {K. T.} and Lin, {D. S.}",

year = "2001",

month = jan,

day = "1",

doi = "10.1063/1.1337636",

language = "English",

volume = "78",

pages = "31--33",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Gallium K-edge x-ray absorption study on Mg-doped GaN

AU - Pan, Y. C.

AU - Wang, S. F.

AU - Lee, W. H.

AU - Lee, M. C.

AU - Chen, Wei-Kuo

AU - Chen, W. H.

AU - Jang, L. Y.

AU - Lee, J. F.

AU - Chiang, C. I.

AU - Chang, H.

AU - Wu, K. T.

AU - Lin, D. S.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Ga K-edge x-ray absorption measurements were employed to investigate Mg-doping effects in GaN samples. Strong polarization-dependent x-ray absorption near-edge structures become less pronounced with increasing doping concentration, indicating the formation of a mixing-phase structure of cubic and hexagonal phases. Analysis of the extended x-ray absorption region of the spectra revealed doping-related defects such as vacancies, substitutions, and interstitial occupations. They were formed anisotropically in the crystal c axis direction and its perpendiculars. Disorderliness arising from phase mix and defects is believed to have lowered the Debye temperature of the doped GaN films and caused the destructive interference of the absorption fine-structure oscillation functions. These effects were taken into account for the observed large coordination number reductions in our samples.

AB - Ga K-edge x-ray absorption measurements were employed to investigate Mg-doping effects in GaN samples. Strong polarization-dependent x-ray absorption near-edge structures become less pronounced with increasing doping concentration, indicating the formation of a mixing-phase structure of cubic and hexagonal phases. Analysis of the extended x-ray absorption region of the spectra revealed doping-related defects such as vacancies, substitutions, and interstitial occupations. They were formed anisotropically in the crystal c axis direction and its perpendiculars. Disorderliness arising from phase mix and defects is believed to have lowered the Debye temperature of the doped GaN films and caused the destructive interference of the absorption fine-structure oscillation functions. These effects were taken into account for the observed large coordination number reductions in our samples.

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U2 - 10.1063/1.1337636

DO - 10.1063/1.1337636

M3 - Article

AN - SCOPUS:18044402083

SN - 0003-6951

VL - 78

SP - 31

EP - 33

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Gallium K-edge x-ray absorption study on Mg-doped GaN

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