GaAs/AIGaAs Power Heterobipolar Transistor Fabricated on Silicon Substrate

Daisuke Ueda; W. S. Lee; T. M.A.D. Costa; J. S. Harris

doi:10.1049/el:19890849

GaAs/AIGaAs Power Heterobipolar Transistor Fabricated on Silicon Substrate

Daisuke Ueda, W. S. Lee, T. M.A.D. Costa, J. S. Harris

國際半導體產業學院

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

A GaAs/AIGaAs power HBT was fabricated on a silicon substrate, where the thermal conductance is reduced by a factor of 2-8 compared with that on bulk GaAs. Owing to the newly developed monolithically grown ballast resistor over an emitter region, the experimentally fabricated device has shown the highest collector current of over 2-5 A for a device with an active device area of 014 mm².

原文	English
頁（從 - 到）	1268-1269
頁數	2
期刊	Electronics Letters
卷	25
發行號	19
DOIs	https://doi.org/10.1049/el:19890849
出版狀態	Published - 17 8月 1989

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abstract = "A GaAs/AIGaAs power HBT was fabricated on a silicon substrate, where the thermal conductance is reduced by a factor of 2-8 compared with that on bulk GaAs. Owing to the newly developed monolithically grown ballast resistor over an emitter region, the experimentally fabricated device has shown the highest collector current of over 2-5 A for a device with an active device area of 014 mm2.",

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author = "Daisuke Ueda and Lee, {W. S.} and Costa, {T. M.A.D.} and Harris, {J. S.}",

year = "1989",

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AU - Lee, W. S.

AU - Costa, T. M.A.D.

AU - Harris, J. S.

PY - 1989/8/17

Y1 - 1989/8/17

N2 - A GaAs/AIGaAs power HBT was fabricated on a silicon substrate, where the thermal conductance is reduced by a factor of 2-8 compared with that on bulk GaAs. Owing to the newly developed monolithically grown ballast resistor over an emitter region, the experimentally fabricated device has shown the highest collector current of over 2-5 A for a device with an active device area of 014 mm2.

AB - A GaAs/AIGaAs power HBT was fabricated on a silicon substrate, where the thermal conductance is reduced by a factor of 2-8 compared with that on bulk GaAs. Owing to the newly developed monolithically grown ballast resistor over an emitter region, the experimentally fabricated device has shown the highest collector current of over 2-5 A for a device with an active device area of 014 mm2.

KW - Bipolar devices

KW - Power semiconductor devices

KW - Semiconductor devices and materials

KW - Transistors

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JF - Electronics Letters

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GaAs/AIGaAs Power Heterobipolar Transistor Fabricated on Silicon Substrate

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