GaAs MESFET model for circuit simulation

Peter George, Ping K. Ko, Chen-Ming Hu

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

This paper describes a generalized circuit model for GaAs MESFETs. The novel features of the model include continuous descriptions for the intrinsic FET, Schottky diode and inter-electrode capacitance, valid both above and below device threshold. The model also displays good agreement with HEMT characteristics.

原文English
頁(從 - 到)379-397
頁數19
期刊International Journal of Electronics
66
發行號3
DOIs
出版狀態Published - 1 1月 1989

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