GaAs MESFET model for circuit simulation

Peter George; Ping K. Ko; Chen-Ming Hu

doi:10.1080/00207218908925396

GaAs MESFET model for circuit simulation

Peter George, Ping K. Ko, Chen-Ming Hu

國際半導體產業學院

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

This paper describes a generalized circuit model for GaAs MESFETs. The novel features of the model include continuous descriptions for the intrinsic FET, Schottky diode and inter-electrode capacitance, valid both above and below device threshold. The model also displays good agreement with HEMT characteristics.

原文	English
頁（從 - 到）	379-397
頁數	19
期刊	International Journal of Electronics
卷	66
發行號	3
DOIs	https://doi.org/10.1080/00207218908925396
出版狀態	Published - 1 1月 1989

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10.1080/00207218908925396

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GaAs MESFET model for circuit simulation

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