GaA1As/GaAs Heterojunction Bipolar Transistors: Issues and Prospects for Application

P. M. Asbeck; Mau-Chung Chang; J. A. Higgins; N. H. Sheng; G. J. Sullivan; Keh Chung Wang

doi:10.1109/16.40886

GaA1As/GaAs Heterojunction Bipolar Transistors: Issues and Prospects for Application

P. M. Asbeck, Mau-Chung Chang, J. A. Higgins, N. H. Sheng, G. J. Sullivan, Keh Chung Wang

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摘要

Issues important for the manufacturing of GaAlAs/GaAs heterojunction bipolar transistors and their prospects for application in various areas are discussed. Microwave and digital performance status of HBT's is reviewed. Extrapolated values of maximum frequency of oscillation above 200 GHz and frequency divider operation at 26.9 GHz are reported. Key prospects for further device development are highlighted.

原文	English
頁（從 - 到）	2032-2042
頁數	11
期刊	IEEE Transactions on Electron Devices
卷	36
發行號	10
DOIs	https://doi.org/10.1109/16.40886
出版狀態	Published - 1 1月 1989

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GaA1As/GaAs Heterojunction Bipolar Transistors: Issues and Prospects for Application

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