GaA1As/GaAs Heterojunction Bipolar Transistors: Issues and Prospects for Application

P. M. Asbeck, Mau-Chung Chang, J. A. Higgins, N. H. Sheng, G. J. Sullivan, Keh Chung Wang

    研究成果: Article同行評審

    158 引文 斯高帕斯(Scopus)

    摘要

    Issues important for the manufacturing of GaAlAs/GaAs heterojunction bipolar transistors and their prospects for application in various areas are discussed. Microwave and digital performance status of HBT's is reviewed. Extrapolated values of maximum frequency of oscillation above 200 GHz and frequency divider operation at 26.9 GHz are reported. Key prospects for further device development are highlighted.

    原文English
    頁(從 - 到)2032-2042
    頁數11
    期刊IEEE Transactions on Electron Devices
    36
    發行號10
    DOIs
    出版狀態Published - 1 1月 1989

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