Fundamental mode operation of high-power InGaAs/GaAs/AlGaAs laser arrays

J. S. Tsang*, D. C. Liou, Chia-Ming Tsai, C. P. Lee, Feng Yuh Juang

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

A new stable fundamental mode operation of a ridge wave guide laser array has been fabricated by introducing absorption regions in the laser stripes except the central one. The structure may be considered as an integrated injection locking array or the distributed saturable absorption laser array. The threshold current is typically 40 mA and the maximum power is more than 150 mW for laser arrays with five elements. The single lobed far field pattern is centered at 0° with a full width at half maximum of 2° at I = 1.5 I th.

原文English
主出版物標題Proceedings of SPIE - The International Society for Optical Engineering
發行者Publ by Int Soc for Optical Engineering
頁面24-26
頁數3
ISBN(列印)0819410136
DOIs
出版狀態Published - 1 十二月 1992
事件Optoelectronic Component Technologies - Hsinchu, Taiwan
持續時間: 16 十二月 199218 十二月 1992

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
1813
ISSN(列印)0277-786X

Conference

ConferenceOptoelectronic Component Technologies
城市Hsinchu, Taiwan
期間16/12/9218/12/92

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