Functional Demonstration of a Fully Integrated Magneto-Electric Spin-Orbit Device

Diogo C. Vaz; Chia Ching Lin; John Plombon; Won Young Choi; Inge Groen; Isabel Arango; Van Tuong Pham; Dmitri E. Nikonov; Hai Li; Punyashloka Debashis; Scott B. Clendenning; Tanay A. Gosavi; Vincent Garcia; Stephane Fusil; Manuel Bibes; Yen Lin Huang; Bhagwati Prasad; Ramamoorthy Ramesh; Felix Casanova; Ian A. Young

doi:10.1109/IEDM19574.2021.9720677

Functional Demonstration of a Fully Integrated Magneto-Electric Spin-Orbit Device

Diogo C. Vaz^*, Chia Ching Lin, John Plombon, Won Young Choi, Inge Groen, Isabel Arango, Van Tuong Pham, Dmitri E. Nikonov, Hai Li, Punyashloka Debashis, Scott B. Clendenning, Tanay A. Gosavi, Vincent Garcia, Stephane Fusil, Manuel Bibes, Yen Lin Huang, Bhagwati Prasad, Ramamoorthy Ramesh, Felix Casanova, Ian A. Young

^*此作品的通信作者

材料科學與工程學系

研究成果: Conference contribution › 同行評審

10 引文斯高帕斯（Scopus）

摘要

We present the first experimental realization of a magnetoelectric spin-orbit (MESO) logic device at room temperature. Two logic states are determined by the magnetization direction of a nanostructured CoFe element, which is switched by a magnetoelectric BiFeO3 layer (WRITE) and detected through spin-To-charge conversion effect in a Pt element (READ).

原文	English
主出版物標題	2021 IEEE International Electron Devices Meeting, IEDM 2021
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	32.4.1-32.4.4
ISBN（電子）	9781665425728
DOIs	https://doi.org/10.1109/IEDM19574.2021.9720677
出版狀態	Published - 2021
事件	2021 IEEE International Electron Devices Meeting, IEDM 2021 - San Francisco, 美國持續時間: 11 12月 2021 → 16 12月 2021

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
卷	2021-December
ISSN（列印）	0163-1918

Conference

Conference	2021 IEEE International Electron Devices Meeting, IEDM 2021
國家/地區	美國
城市	San Francisco
期間	11/12/21 → 16/12/21

存取文件

10.1109/IEDM19574.2021.9720677

其它文件與鏈接

Link to publication in Scopus

引用此

Vaz, D. C., Lin, C. C., Plombon, J., Choi, W. Y., Groen, I., Arango, I., Pham, V. T., Nikonov, D. E., Li, H., Debashis, P., Clendenning, S. B., Gosavi, T. A., Garcia, V., Fusil, S., Bibes, M., Huang, Y. L., Prasad, B., Ramesh, R., Casanova, F., & Young, I. A. (2021). Functional Demonstration of a Fully Integrated Magneto-Electric Spin-Orbit Device. 於 2021 IEEE International Electron Devices Meeting, IEDM 2021 (頁 32.4.1-32.4.4). (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2021-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19574.2021.9720677

@inproceedings{fc4990a446db4b94a4cd9318c66df1da,

title = "Functional Demonstration of a Fully Integrated Magneto-Electric Spin-Orbit Device",

abstract = "We present the first experimental realization of a magnetoelectric spin-orbit (MESO) logic device at room temperature. Two logic states are determined by the magnetization direction of a nanostructured CoFe element, which is switched by a magnetoelectric BiFeO3 layer (WRITE) and detected through spin-To-charge conversion effect in a Pt element (READ).",

author = "Vaz, {Diogo C.} and Lin, {Chia Ching} and John Plombon and Choi, {Won Young} and Inge Groen and Isabel Arango and Pham, {Van Tuong} and Nikonov, {Dmitri E.} and Hai Li and Punyashloka Debashis and Clendenning, {Scott B.} and Gosavi, {Tanay A.} and Vincent Garcia and Stephane Fusil and Manuel Bibes and Huang, {Yen Lin} and Bhagwati Prasad and Ramamoorthy Ramesh and Felix Casanova and Young, {Ian A.}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Electron Devices Meeting, IEDM 2021 ; Conference date: 11-12-2021 Through 16-12-2021",

year = "2021",

doi = "10.1109/IEDM19574.2021.9720677",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "32.4.1--32.4.4",

booktitle = "2021 IEEE International Electron Devices Meeting, IEDM 2021",

address = "美國",

}

Vaz, DC, Lin, CC, Plombon, J, Choi, WY, Groen, I, Arango, I, Pham, VT, Nikonov, DE, Li, H, Debashis, P, Clendenning, SB, Gosavi, TA, Garcia, V, Fusil, S, Bibes, M, Huang, YL, Prasad, B, Ramesh, R, Casanova, F & Young, IA 2021, Functional Demonstration of a Fully Integrated Magneto-Electric Spin-Orbit Device. 於 2021 IEEE International Electron Devices Meeting, IEDM 2021. Technical Digest - International Electron Devices Meeting, IEDM, 卷 2021-December, Institute of Electrical and Electronics Engineers Inc., 頁 32.4.1-32.4.4, 2021 IEEE International Electron Devices Meeting, IEDM 2021, San Francisco, 美國, 11/12/21. https://doi.org/10.1109/IEDM19574.2021.9720677

Functional Demonstration of a Fully Integrated Magneto-Electric Spin-Orbit Device. / Vaz, Diogo C.; Lin, Chia Ching; Plombon, John 等.
2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 32.4.1-32.4.4 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2021-December).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Functional Demonstration of a Fully Integrated Magneto-Electric Spin-Orbit Device

AU - Vaz, Diogo C.

AU - Lin, Chia Ching

AU - Plombon, John

AU - Choi, Won Young

AU - Groen, Inge

AU - Arango, Isabel

AU - Pham, Van Tuong

AU - Nikonov, Dmitri E.

AU - Li, Hai

AU - Debashis, Punyashloka

AU - Clendenning, Scott B.

AU - Gosavi, Tanay A.

AU - Garcia, Vincent

AU - Fusil, Stephane

AU - Bibes, Manuel

AU - Huang, Yen Lin

AU - Prasad, Bhagwati

AU - Ramesh, Ramamoorthy

AU - Casanova, Felix

AU - Young, Ian A.

PY - 2021

Y1 - 2021

N2 - We present the first experimental realization of a magnetoelectric spin-orbit (MESO) logic device at room temperature. Two logic states are determined by the magnetization direction of a nanostructured CoFe element, which is switched by a magnetoelectric BiFeO3 layer (WRITE) and detected through spin-To-charge conversion effect in a Pt element (READ).

AB - We present the first experimental realization of a magnetoelectric spin-orbit (MESO) logic device at room temperature. Two logic states are determined by the magnetization direction of a nanostructured CoFe element, which is switched by a magnetoelectric BiFeO3 layer (WRITE) and detected through spin-To-charge conversion effect in a Pt element (READ).

UR - http://www.scopus.com/inward/record.url?scp=85126956006&partnerID=8YFLogxK

U2 - 10.1109/IEDM19574.2021.9720677

DO - 10.1109/IEDM19574.2021.9720677

M3 - Conference contribution

AN - SCOPUS:85126956006

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 32.4.1-32.4.4

BT - 2021 IEEE International Electron Devices Meeting, IEDM 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2021 IEEE International Electron Devices Meeting, IEDM 2021

Y2 - 11 December 2021 through 16 December 2021

ER -

Vaz DC, Lin CC, Plombon J, Choi WY, Groen I, Arango I 等. Functional Demonstration of a Fully Integrated Magneto-Electric Spin-Orbit Device. 於 2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 32.4.1-32.4.4. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM19574.2021.9720677

Functional Demonstration of a Fully Integrated Magneto-Electric Spin-Orbit Device

摘要

出版系列

Conference

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指紋

引用此