Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated with Indium-Tin-Oxide Electrodes

Chih Yao Chang, Chun Ta Hsu, Yao Luen Shen, Tian Li Wu, Wei Hung Kuo, Suh Fang Lin, Chih Fang Huang*

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this letter, a fully transparent AlGaN/GaN HEMT (FT-HEMT) using indium-tin-oxide (ITO) as a transparent electrode is fabricated. The n-ohmic contacts are formed based on a Si-implant process using a deposited ITO rather than the conventional alloyed metal stacks. Following a post-annealing process at 600°C, the field-effect mobility and the maximum current density for an FT-HEMT were 1004 cm2/ Vcdot s and 179 mA/mm, respectively. Furthermore, the measured transmittance for a fabricated chip in the visible range of 400 - 700 nm was greater than 70%, which is almost the same as an as-grown GaN-on-sapphire substrate. These results show that, by using this approach, an FT-HEMT that has superior electronic properties, such as high mobility and high output current, can be realized, and show great promise for applications in transparent and/or flexible electronics, as well as other optoelectronic devices.

原文English
文章編號9310336
頁(從 - 到)144-147
頁數4
期刊Ieee Electron Device Letters
42
發行號2
DOIs
出版狀態Published - 2月 2021

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